2-[1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptane

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 2-[1,1,3,3,3-Pentafluoro-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptane
• 英文别名: 2-[1,1,3,3,3-pentafluoro-2-(trifluoromethyl)propyl]bicyclo[2.2.1]heptane
• 化学式: C₁₁H₁₂F₈
• 分子量: 296.2
• InChiKey: XQDVYMIUZAOAJF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.7
• 重原子数：
  19
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  8

文献信息

• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20140141360A1

  公开（公告）日：2014-05-22

  A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit represented by the following formula (I) or (II) as defined in the specification in an amount of 20 mol % or more based on all repeating units in the resin (P) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, so as to form an exposed film; and (iii) a step of developing the exposed film by using a developer containing an organic solvent to form a negative pattern.
• METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD
  申请人：FUJIFILM Corporation

  公开号：US20150118621A1

  公开（公告）日：2015-04-30

  Provided is a method of forming a pattern, including (a) forming a film comprising an actinic-ray- or radiation-sensitive resin composition comprising a resin (P) containing a repeating unit (P1) with a cyclic carbonic acid ester structure and any of repeating units (P2) of general formula (P2-1) below, and a compound (B) that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to actinic rays or radiation, and (c) developing the exposed film with a developer comprising an organic solvent to thereby obtain a negative pattern.
• ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME
  申请人：FUJIFILM Corporation

  公开号：US20160033862A1

  公开（公告）日：2016-02-04

  Provided is an active light-sensitive or radiation-sensitive resin composition with excellent exposure latitude and pattern roughness such as line width roughness, and a pattern-forming method using the same. The active light-sensitive or radiation-sensitive resin composition of the present invention contains (A) at least one type of a compound which is represented by General Formula (I) below and which generates an acid by irradiation with active light or radiation and (B) at least one type of a resin which includes a repeating unit which is represented by General Formula (1) below and of which, due to being decomposed by an action of an acid, the solubility increases with respect to an alkali developer.
• US9034558B2
  申请人：——

  公开号：US9034558B2

  公开（公告）日：2015-05-19
• US9213237B2
  申请人：——

  公开号：US9213237B2

  公开（公告）日：2015-12-15