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2,2-Difluoro-1-(4-tetracyclo[6.2.1.13,6.02,7]dodecanyl)ethanone

中文名称
——
中文别名
——
英文名称
2,2-Difluoro-1-(4-tetracyclo[6.2.1.13,6.02,7]dodecanyl)ethanone
英文别名
2,2-difluoro-1-(4-tetracyclo[6.2.1.13,6.02,7]dodecanyl)ethanone
2,2-Difluoro-1-(4-tetracyclo[6.2.1.13,6.02,7]dodecanyl)ethanone化学式
CAS
——
化学式
C14H18F2O
mdl
——
分子量
240.29
InChiKey
CUQXGJSBDDCFTF-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.9
  • 重原子数:
    17
  • 可旋转键数:
    2
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.93
  • 拓扑面积:
    17.1
  • 氢给体数:
    0
  • 氢受体数:
    3

文献信息

  • PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20140141360A1
    公开(公告)日:2014-05-22
    A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit represented by the following formula (I) or (II) as defined in the specification in an amount of 20 mol % or more based on all repeating units in the resin (P) and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, so as to form an exposed film; and (iii) a step of developing the exposed film by using a developer containing an organic solvent to form a negative pattern.
  • ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN USING THE COMPOSITION, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20140212814A1
    公开(公告)日:2014-07-31
    Provided is an actinic-ray- or radiation-sensitive resin composition, including any of compounds of general formula (1) below that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a resin that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer.
  • PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20150331314A1
    公开(公告)日:2015-11-19
    There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a group capable of decomposing by an action of an acid to produce a polar group, (C1) a compound containing a group capable of generating a first acidic functional group upon irradiation with an actinic ray or radiation and a group capable of generating a second acidic functional group different from the first acidic functional group upon irradiation with an actinic ray or radiation, and (C2) at least one compound containing two or more groups selected from the group consisting of the groups capable of generating the structures represented by the specific formulae upon irradiation with an actinic ray or radiation.
  • ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME
    申请人:FUJIFILM Corporation
    公开号:US20160033862A1
    公开(公告)日:2016-02-04
    Provided is an active light-sensitive or radiation-sensitive resin composition with excellent exposure latitude and pattern roughness such as line width roughness, and a pattern-forming method using the same. The active light-sensitive or radiation-sensitive resin composition of the present invention contains (A) at least one type of a compound which is represented by General Formula (I) below and which generates an acid by irradiation with active light or radiation and (B) at least one type of a resin which includes a repeating unit which is represented by General Formula (1) below and of which, due to being decomposed by an action of an acid, the solubility increases with respect to an alkali developer.
  • US9034558B2
    申请人:——
    公开号:US9034558B2
    公开(公告)日:2015-05-19
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