10-Oxatetracyclo[6.3.1.02,7.09,11]dodecane

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 10-Oxatetracyclo[6.3.1.02,7.09,11]dodecane
• 英文别名: 10-oxatetracyclo[6.3.1.02,7.09,11]dodecane
• 化学式: C₁₁H₁₆O
• 分子量: 164.24
• InChiKey: UTZUMUCWEYOBAK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  4.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  12.5
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• SEMICONDUCTOR ELEMENT AND INSULATING-LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：EP3125277A1

  公开（公告）日：2017-02-01

  Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other. m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB),' R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring. m1b represents an integer of 1 to 5.

  本发明提供了一种半导体元件，该元件具有半导体层和与半导体层相邻的绝缘层，其中绝缘层由聚合物化合物的交联产物形成，该聚合物化合物具有如下通式(IA)表示的重复单元(IA)和如下通式(IB)表示的重复单元(IB)。 通式（IA）中，R1a 代表氢原子、卤素原子或烷基。L1a 和 L2a 各自独立地代表单键或连接基团。X 代表可交联基团。m2a 代表 1 至 5 的整数，在 m2a 为 2 或 2 以上的情况下，m2a 中 X 的数目可以相同或不同。m1a 代表 1 至 5 的整数，在 m1a 为 2 或 2 以上的情况下，m1a 中 (-L2a-(X)m2a) 的数目可以相同或不同。通式（IB）中，' R1b 代表氢原子、卤素原子或烷基。L1b 代表单键或连接基团，Ar1b 代表芳香环。
• SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
  申请人：Fujifilm Corporation

  公开号：EP3142160A1

  公开（公告）日：2017-03-15

  A semiconductor element which comprises a semiconductor layer and an insulating layer that is adjacent to the semiconductor layer, and wherein the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by general formula (IA) and a repeating unit (IB) represented by general formula (IB); and an insulating layer-forming composition for forming an insulating layer of a semiconductor element, which contains a polymer compound that has the repeating structures (IA) and (IB). (In general formulae, each of R1a and R1b independently represents a hydrogen atom, a halogen atom or an alkyl group; each of L1a, L2a and L1b independently represents a single bond or a linking group; X represents a crosslinkable group; YB represents a decomposable group or a hydrogen atom; each of m1a and m2a independently represents an integer of 1-5; and each * represents a bonding position of the repeating units.)

  一种半导体元件，它包括半导体层和与半导体层相邻的绝缘层，其中绝缘层由具有通式(IA)代表的重复单元(IA)和通式(IB)代表的重复单元(IB)的聚合物化合物的交联产物形成；以及一种用于形成半导体元件绝缘层的绝缘层形成组合物，它含有具有重复结构(IA)和(IB)的聚合物化合物。(通式中，R1a和R1b各自独立地代表氢原子、卤原子或烷基；L1a、L2a和L1b各自独立地代表单键或连接基团；X代表可交联基团；YB代表可分解基团或氢原子；m1a和m2a各自独立地代表1-5的整数；每个*代表重复单元的键合位置)。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：US20140242502A1

  公开（公告）日：2014-08-28

  According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.
• SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：US20170054076A1

  公开（公告）日：2017-02-23

  Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R 1a and R 1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L 1a , L 2a , and L 1b each independently represent a single bond or a linking group. X represents a crosslinkable group and Y B represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
• US9400430B2
  申请人：——

  公开号：US9400430B2

  公开（公告）日：2016-07-26