The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II),
wherein R1 is H, haloalkyl group or C1-C4 alkyl group; R2 is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The chemical amplified photoresist composition of the present invention can be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light sources, and exhibit excellent resolution, figures and photosensitivity.
本发明公开了一种
化学增感光阻组合物,包括具有式(II)重复单元的聚合物,其中R1为H、卤代烷基或C1-C4烷基;R2为羟基、C1-C8烷氧基或C1-C8
硫代烷基;G为(
CH2)n、O或S,其中n为0、1、2、3或4;Rc为内酯基;m为1、2或3。本发明的
化学增感光阻组合物可应用于一般光刻工艺,特别是ArF、KrF或类似光源的光刻,并表现出优异的分辨率、图形和光敏性。