1,1,1,3,3,3-Hexafluoropropan-2-yl 2-(2-tert-butyl-2,4,4-trimethylpentanoyl)oxy-5-oxo-4-oxatricyclo[4.2.1.03,7]nonane-9-carboxylate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 1,1,1,3,3,3-Hexafluoropropan-2-yl 2-(2-tert-butyl-2,4,4-trimethylpentanoyl)oxy-5-oxo-4-oxatricyclo[4.2.1.03,7]nonane-9-carboxylate
• 英文别名: 1,1,1,3,3,3-hexafluoropropan-2-yl 2-(2-tert-butyl-2,4,4-trimethylpentanoyl)oxy-5-oxo-4-oxatricyclo[4.2.1.03,7]nonane-9-carboxylate
• 化学式: C₂₄H₃₂F₆O₆
• 分子量: 530.5
• InChiKey: SABIMTDXUHLHCS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.6
• 重原子数：
  36
• 可旋转键数：
  9
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  78.9
• 氢给体数：
  0
• 氢受体数：
  12

文献信息

• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170299963A1

  公开（公告）日：2017-10-19

  A monomer having an onium salt structure represented by formula (1) gives a polymer which is fully compatible with resist components. A resist composition comprising the polymer has advantages including reduced acid diffusion, high sensitivity, high resolution, a good balance of lithography properties, and less defects, and is quite effective for precise micropatterning.

  具有公式（1）所表示的onium盐结构的单体会产生与抗蚀剂组分完全兼容的聚合物。包括该聚合物的抗蚀剂组合物具有降低酸扩散、高灵敏度、高分辨率、良好的光刻特性平衡以及较少的缺陷等优点，对于精确微图案制备非常有效。
• NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170315442A1

  公开（公告）日：2017-11-02

  A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.

  式为（1）的羧酸铵盐具有令人满意的酸扩散控制（或淬灭）功能。包含该羧酸铵盐的抗蚀剂组合物可以通过DUV或EUV光刻技术进行加工，以形成具有改善分辨率、降低线宽粗糙度和开发后最小缺陷的抗蚀剂图案。
• Sulfonium compound, making method, resist composition, and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10248022B2

  公开（公告）日：2019-04-02

  A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R1, R2 and R3 are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.

  具有式（1）的锍化合物具有令人满意的酸扩散控制功能，其中 R1、R2 和 R3 为 C1-C20 单价烃基，可含有杂原子，p=0-5，q=0-5，r=0-4。包含锍化合物的抗蚀剂组合物经光刻处理后，可形成分辨率、LWR、MEF 和 CDU 均有所提高的抗蚀图案。
• Sulfonium salt, resist composition, and patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10754248B2

  公开（公告）日：2020-08-25

  The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion. The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1′),

  本发明提供了一种锍盐，能够提供一种在使用高能量光束作为光源的光刻技术中缺陷很少的抗蚀剂组合物，并通过控制酸扩散实现优异的光刻性能。 本发明是由包括阴离子和阳离子的锍盐实现的，阳离子具有以下通式(1)表示的部分结构，但具有以下通式(1′)表示的阳离子的锍盐除外、
• NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170329227A1

  公开（公告）日：2017-11-16

  A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R 1 , R 2 and R 3 are a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU.