Provided are a photosensitive composition for EUV light, which has a good Z-factor and is capable of forming a pattern having a suppressed bridge defect, a pattern forming method, and a method for manufacturing an electronic device. The photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3,
Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=H×0.04+C×1.0+N×2.1+O×3.6+F×5.6+S×1.5+I×39.5/H×1+C×12+N×14+O×16+F×19+S×19+S×32+I×127
Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less,
Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.
本发明提供了一种具有良好 Z 因子并能形成具有被抑制的桥接缺陷的图案的 EUV 光用光敏组合物、一种图案形成方法以及一种制造电子设备的方法。超紫外光用光敏组合物包括预定
树脂和光酸发生器,或包括具有光酸发生基团的重复单元的预定
树脂,并满足要求 1 至 3、
要求 1:由式(1)确定的 A 值为 0.14 或以上,A=H×0.04+C×1.0+N×2.1+O×3.6+F×5.6+S×1.5+I×39.5/H×1+C×12+N×14+O×16+F×19+S×19+S×32+I×127
要求 2:EUV 光的感光成分中固体含量的质量浓度不超过 5.0%、
要求 3:光酸发生器的含量占极紫外光感光成分中固体总含量的 5%至 50%。