2-ethoxy-3-methyl-butan; (-)(R)-3-ethoxy-2-methyl-butane | 89851-33-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2-ethoxy-3-methyl-butan; (-)(R)-3-ethoxy-2-methyl-butane
• 英文别名: (-)(R)-3-Aethoxy-2-methyl-butan；2-Aethoxy-3-methyl-butan; (-)(R)-3-Aethoxy-2-methyl-butan；(2R)-2-ethoxy-3-methylbutane
• CAS: 89851-33-2
• 化学式: C₇H₁₆O
• 分子量: 116.203
• InChiKey: UJRCLZKWBWUTRC-SSDOTTSWSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  8
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  ethyl (R)-2-ethoxypropanoate 在 platinum(IV) oxide 、 乙醚 、 4-异丙基甲苯 、 氢化钾 、 溶剂黄146 作用下， 生成 2-ethoxy-3-methyl-butan; (-)(R)-3-ethoxy-2-methyl-butane
  参考文献：
  名称：

  Stevens, Journal of the American Chemical Society, 1932, vol. 54, p. 3737

  摘要：

  DOI：

文献信息

• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20090246694A1

  公开（公告）日：2009-10-01

  Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基，R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20100099042A1

  公开（公告）日：2010-04-22

  A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R 1 is H, F, methyl or trifluoromethyl, R 2 , R 3 and R 4 are C 1 -C 10 alkyl, alkenyl or oxoalkyl or C 6 -C 18 aryl, aralkyl or aryloxoalkyl, or two of R 2 , R 3 and R 4 may bond together to form a ring with S, A is a C 2 -C 20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

  提供具有式（1）的可聚合含阴离子的亚砜盐，其中R1为H、F、甲基或三氟甲基，R2、R3和R4为C1-C10烷基、烯基或氧代烷基或C6-C18芳基、芳基烷基或芳基氧代烷基，或R2、R3和R4中的两个可以结合在一起形成与S的环，A为具有环状结构的C2-C20烃基团，n为0或1。该亚砜盐在暴露于高能辐射时生成非常强的磺酸。还提供了一种包含从该亚砜盐衍生的聚合物的抗蚀组合物。
• ACID-LABILE ESTER MONOMER HAVING SPIROCYCLIC STRUCTURE, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Kinsho Takeshi

  公开号：US20100304295A1

  公开（公告）日：2010-12-02

  An acid-labile ester monomer of spirocyclic structure has formula (1) wherein Z is a monovalent group having a polymerizable double bond, X is a divalent group which forms a cyclopentane, cyclohexane or norbornane ring, R 2 is H or monovalent hydrocarbon, R 3 and R 4 are H or monovalent hydrocarbon, or R 3 and R 4 , taken together, stand for a divalent group which forms a cyclopentane or cyclohexane ring, and n is 1 or 2. A polymer obtained from the acid-labile ester monomer has so high reactivity in acid-catalyzed elimination reaction that the polymer may be used to formulate a resist composition having high resolution.

  一种酸敏感酯单体具有螺环结构，其化学式如下（1），其中Z是具有可聚合双键的一价基团，X是形成环戊烷、环己烷或诺邦烷环的二价基团，R2是H或一价碳氢基团，R3和R4是H或一价碳氢基团，或者R3和R4一起表示形成环戊烷或环己烷环的二价基团，n为1或2。从酸敏感酯单体获得的聚合物在酸催化消除反应中具有很高的反应性，因此可以用于制备具有高分辨率的抗蚀组合物。
• RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184967A1

  公开（公告）日：2017-06-29

  A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

  提供一种聚合物，其中包含含有特定内酯环的重复单元，并且在融合环内酯的γ-丁内酯骨架上具有烷基基团，以及在内酯结构和聚合物主链之间具有烷基酯取代基团。以该聚合物为基础树脂的抗蚀组合物在DOF边缘和MEF等性能方面得到改善，并且非常有效用于精确微图案化。
• HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160238930A1

  公开（公告）日：2016-08-18

  A polymer for resist use is obtainable from a hemiacetal compound having formula (1 a ) wherein R 1 is H, CH 3 or CF 3 , R 2 to R 4 each are H or a monovalent hydrocarbon group, X 1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k 1 =0 or 1, and k 2 =0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

  从具有以下式（1a）的半缩醛化合物获得用于抗蚀的聚合物，其中R1为H、CH3或CF3，R2至R4分别为H或单价碳氢基团，X1为二价碳氢基团，ZZ表示具有半缩醛结构的非芳香性4至20个碳原子的单环或多环环，k1=0或1，k2=0至3。包含该聚合物的抗蚀组合物显示出在正片和负片显影过程中控制酸扩散和低粗糙度。