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2-(4-Butan-2-ylphenyl)propane-2-thiol

中文名称
——
中文别名
——
英文名称
2-(4-Butan-2-ylphenyl)propane-2-thiol
英文别名
2-(4-butan-2-ylphenyl)propane-2-thiol
2-(4-Butan-2-ylphenyl)propane-2-thiol化学式
CAS
——
化学式
C13H20S
mdl
——
分子量
208.36
InChiKey
JGNKCJWXOJQREP-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.3
  • 重原子数:
    14
  • 可旋转键数:
    3
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.54
  • 拓扑面积:
    1
  • 氢给体数:
    1
  • 氢受体数:
    1

文献信息

  • Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film
    申请人:FUJIFILM CORPORATION
    公开号:US10248019B2
    公开(公告)日:2019-04-02
    A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
    一种形成图案的方法包括:(i) 使用一种含有(A)一种能够在受到光或辐射照射时生成酸并通过酸的作用分解以降低该化合物(A)对有机溶剂的溶解度的光敏或辐射敏感树脂组合物形成薄膜;(ii) 曝光薄膜;和(iii) 使用含有有机溶剂的显影剂进行显影。
  • Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern
    申请人:FUJIFILM Corporation
    公开号:US10234759B2
    公开(公告)日:2019-03-19
    Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (A) and any of compounds (B) of general formula (I) below. (In general formula (I), Rf represents a fluorine atom or a monovalent organic group containing at least one fluorine atom; R1 represents a hydrogen atom or a monovalent substituent containing no fluorine atom; X1 represents a monovalent organic group having at least two carbon atoms, or a methyl group in which a substituent other than a fluorine atom is optionally introduced, provided that X1 may be bonded to R1 to thereby form a ring; and Z represents a moiety that when exposed to actinic rays or radiation, is converted to a sulfonic acid group, an imidic acid group or a methide acid group).
    本发明提供了一种对辐照或辐射敏感的树脂组合物,该组合物包括树脂(A)和以下通式(I)的任何化合物(B)。(在通式(I)中,Rf 代表原子或含有至少一个原子的一价有机基团;R1 代表氢原子或不含原子的一价取代基;X1 代表至少含有两个碳原子的一价有机基团,或可选择引入原子以外的取代基的甲基,条件是 X1 可与 R1 键合,从而形成一个环;以及 Z 代表当暴露于放热射线或辐射时会转化为磺酸基团、酰亚胺酸基团或甲酰胺酸基团的分子)。
  • Treatment liquid and pattern forming method
    申请人:FUJIFILM Corporation
    公开号:US11042094B2
    公开(公告)日:2021-06-22
    An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.
    本发明的目的是提供一种用于抗蚀剂薄膜图案化的处理液和一种图案形成方法,每种处理液和方法都能同时抑制抗蚀剂 L/S 图案崩溃和抗蚀剂 C/H 图案遗漏故障的发生。 本发明的处理液是一种用于抗蚀剂薄膜图案化的处理液,它用于将从对放 射线敏感或对辐射敏感的树脂组合物中获得的抗蚀剂薄膜进行显影或洗涤中的 至少一种处理,并含有一种有机溶剂,其中处理液含有相对介电常数为 4.0 或以下 的第一种有机溶剂和相对介电常数为 6.0 或以上的第二种有机溶剂。
  • RADIATION-SENSITIVE OR ACTINIC RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, MASK BLANK, RESIST PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20170059990A1
    公开(公告)日:2017-03-02
    A radiation-sensitive or actinic ray-sensitive resin composition contains a polymer compound (A) including a structural part (a) that is decomposed by irradiation with actinic rays or radiation to generate an acid anion on a side chain and a repeating unit (b) that is represented by the following Formula (I), in the formula, R 3 represents a hydrogen atom, an organic group, or a halogen atom, A 1 represents an aromatic ring group or an alicyclic group. R 1 and R 2 each independently represent an alkyl group, a cycloalkyl group, or an aryl group, at least two of A 1 , R 1 , or R 2 may be bonded to each other to form a ring. B 1 and L 1 each independently represent a single bond or a divalent linking group, X represents a hydrogen atom or an organic group, n represents an integer of 1 or greater.
  • PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION
    申请人:FUJIFILM Corporation
    公开号:US20190196328A1
    公开(公告)日:2019-06-27
    A pattern forming method includes the following steps i), ii), and iii); i) a step of forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of more than 9 μm and 20 μm or less, using an actinic ray-sensitive or radiation-sensitive composition including a solvent (S) satisfying specific conditions; ii) a step of irradiating the actinic ray-sensitive or radiation-sensitive film with actinic rays or radiation; and iii) a step of developing the actinic ray-sensitive or radiation-sensitive film irradiated with actinic rays or radiation, using a developer.
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