There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R
6
is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0
本文披露了一种光刻用于220nm或更低波长的光的光阻材料,其包括至少由以下化学式(2)表示的聚合物和用于曝光后生成酸的光酸发生剂:其中,R1、R2、R3和R5分别为氢原子或甲基基团;R4为酸敏感基团、具有7至13个碳原子的脂环烃基团,其具有酸敏感基团、具有7至13个碳原子的脂环烃基团,其具有羧基基团,或具有3至13个碳原子的碳氢基团,其具有环氧基团;R6为氢原子、具有1至12个碳原子的碳氢基团,或具有7至13个碳原子的脂环烃基团,其具有羧基基团;x、y和z是可选值,满足x+y+z=1,0
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