exo-2-Methyl-endo-2-norbornyl propionate

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: exo-2-Methyl-endo-2-norbornyl propionate
• 英文别名: (2-methyl-2-bicyclo[2.2.1]heptanyl) propanoate
• 化学式: C₁₁H₁₈O₂
• 分子量: 182.26
• InChiKey: SJYITXAUMAYYCO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.5
• 重原子数：
  13
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.91
• 拓扑面积：
  26.3
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• MOLECULAR GLASS OF SPIROFLUORENE DERIVATIVE, PREPARATION METHOD THEREOF AND USE THEREOF IN PHOTO-ETCHING
  申请人：TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY OF THE CHINESE ACADEMY OF SCIENCES

  公开号：US20150353468A1

  公开（公告）日：2015-12-10

  Disclosed is a molecular glass of a spirofluorene derivative having a molecular structure as follows: formula (I), wherein each of R 1 -R 12 is a hydrogen atom, a hydroxyl group, a methoxyl group or an acid-sensitive substituent; substituents R 1 ˜R 12 can be identical or different, but on the same benzene ring the substituents cannot all be hydrogen atoms. The molecular glass has a good solubility in various polar solvents, is suitable to be made into a film; meanwhile the molecular glass has a very high glass transition temperature and meets the requirements of the photolithography processing technology. Also disclosed is a preparation method of the above-mentioned molecular glass of a spirofluorene derivative. The synthetic process of the method is simple and suitable for industrialization. Further disclosed is the use of a photo-resist with the above-mentioned molecular glass as a main material in photo-etching, wherein the molecular glass of a spirofluorene derivative with hydroxyl groups (or partly with hydroxyl groups) on the periphery thereof can be used as a negative photo-resist, and the molecular glass with the hydroxyl groups on the periphery thereof protected (or partly protected) by an acid-sensitive substituent can be used as a positive photo-resist.

  揭示了一种螺氟萘衍生物的分子玻璃，其分子结构如下：式（I），其中R1-R12中的每一个是氢原子、羟基、甲氧基或酸敏感取代基；取代基R1～R12可以相同也可以不同，但在同一苯环上，取代基不能全为氢原子。该分子玻璃在各种极性溶剂中具有良好的溶解性，适用于制成薄膜；同时，该分子玻璃具有非常高的玻璃转变温度，符合光刻工艺技术的要求。还公开了上述螺氟萘衍生物的分子玻璃的制备方法。该方法的合成过程简单，适合工业化生产。进一步公开了将上述分子玻璃作为主要材料的光刻用光刻胶的用途，其中，带有羟基（或部分带有羟基）的螺氟萘衍生物分子玻璃可用作负光刻胶，而带有酸敏感取代基保护的（或部分保护的）带有羟基的螺氟萘衍生物分子玻璃可用作正光刻胶。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Hatakeyama Jun

  公开号：US20100227273A1

  公开（公告）日：2010-09-09

  A positive resist composition comprising as a base resin a polymer having carboxyl groups whose hydrogen is substituted by an acid labile group of acenaphthene structure exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal LER after exposure, a significant effect of suppressing acid diffusion rate, and improved etching resistance.

  一种正性光阻组合物，包括一种基础树脂，其具有羧基，其氢被取代为一个蒽环结构的酸不稳定基团。该组合物在曝光前后表现出高对比度的碱溶解速率、高分辨率、良好的图案轮廓和曝光后最小的LER，具有抑制酸扩散速率的显著效果，以及改善的蚀刻抗性。
• Pattern forming method, resist pattern, and process for producing electronic device
  申请人：FUJIFILM Corporation

  公开号：US10578968B2

  公开（公告）日：2020-03-03

  The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.

  本发明的目的是提供一种能够提供良好的DOF和EL的图案形成方法、一种由该图案形成方法形成的抗蚀剂图案，以及一种制造电子设备的方法，包括该图案形成方法。本发明的图案形成方法包括步骤 a：在基板上涂布活性光敏或辐射敏感树脂组合物以形成抗蚀剂薄膜；步骤 b：在抗蚀剂薄膜上涂布用于形成上层薄膜的组合物以在抗蚀剂薄膜上形成上层薄膜；步骤 c：曝光形成有上层薄膜的抗蚀剂薄膜；步骤 d：使用显影剂显影曝光的抗蚀剂薄膜以形成图案，其中活性光敏或辐射敏感树脂组合物包含疏水性树脂。
• SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20130210236A1

  公开（公告）日：2013-08-15

  The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C).The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound.
• COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150004791A1

  公开（公告）日：2015-01-01

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.