cis-2-pinanol

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: cis-2-pinanol
• 英文别名: (1R,5S)-2,6,6-trimethylbicyclo[3.1.1]heptan-2-ol
• 化学式: C₁₀H₁₈O
• 分子量: 154.252
• InChiKey: YYWZKGZIIKPPJZ-VLCSVPMDSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  11
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• Novel copolymers and photoresist compositions comprising same
  申请人：——

  公开号：US20030215742A1

  公开（公告）日：2003-11-20

  The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

  本发明涉及聚合物和光阻组合物，其中聚合物作为树脂粘合剂组分。本发明的光阻包括化学增强的正作用光阻，可在短波长下有效成像，例如亚200纳米，特别是193纳米。本发明的聚合物适当包含1）光酸易裂解基团，最好包含脂环状基团；2）聚合的电子不足单体；3）聚合的环烯烃基团。本发明特别优选四聚物或五聚物，最好具有不同的聚合的诺伯烯单元。
• Cyanoadamantyl compounds and polymers
  申请人：Rohm and Haas Electronic Materials, L.L.C.

  公开号：EP1586944A1

  公开（公告）日：2005-10-19

  Cyanoadamantyl compounds, polymers that comprise polymerized units of such compounds, and photoresist compositions that comprise such polymers are provided. Preferred polymers of the invention are employed in photoresists imaged at wavelengths less than 250 nm such as 248 nm and 193 nm.

  本发明提供了氰基金刚烷化合物、包括这种化合物聚合单元的聚合物以及包括这种聚合物的光阻组合物。本发明的优选聚合物用于在小于250纳米的波长下进行成像的光阻，例如248纳米和193纳米。
• Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
  申请人：Shipley Company, L.L.C.

  公开号：US20040076906A1

  公开（公告）日：2004-04-22

  The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

  本发明涉及聚合物和光阻组合物，其中聚合物作为树脂粘合剂组分。本发明的光阻包括化学增强型正向作用光阻，可在短波长下有效成像，例如亚200纳米，特别是193纳米。本发明的聚合物在指定的摩尔比例下包含腈基和光酸不稳定基团，具有螺环状基团，特别是桥联双环或三环基团或其他笼状基团。本发明的聚合物和光阻可以表现出对等离子体刻蚀剂的相当抵抗力。
• Phenolic/alicyclic copolymers and photoresists
  申请人：Shipley Company, L.L.C.

  公开号：US20030207200A1

  公开（公告）日：2003-11-06

  The present invention relates to new polymers that contain repeat units of phenol and photoacid-labile esters that contain an alicyclic group, preferably a bulky group that suitably may contain 7 to about 20 carbons, such as an alkyladamantyl, ethylfencyl, tricyclo decanyl, or pinanyl group. Polymers of the invention are useful as a component of chemically-amplified positive-acting resists.

  本发明涉及含有苯酚和光酸解性酯重复单元的新型聚合物，该酯含有脂环族基团，优选为适当含有7至约20个碳的笨重基团，例如烷基金刚烷基、乙基芬烷基、三环癸烷基或蒎烷基。本发明的聚合物可作为化学增强型正向感光胶的组分使用。
• Copolymers having nitride and alicyclic leaving groups and photoresist compositions comprising same
  申请人：Shipley Company LLC

  公开号：EP1091249A1

  公开（公告）日：2001-04-11

  The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention contain in specified molar ratios both nitrile and photoacid labile groups that have an alicyclic moiety, particularly a bridged bicyclic or tricyclic group or other caged group. Polymers and resists of the invention can exhibit substantial resistance to plasma etchants.

  本发明涉及聚合物和光阻组合物，其中聚合物作为树脂粘合剂组分。本发明的光阻包括化学增强型正作用光阻，可在短波长下有效成像，如亚200纳米，特别是193纳米。本发明的聚合物在指定的摩尔比例下包含腈和光酸不稳定基团，其具有螺环状基团，特别是桥式双环或三环基团或其他笼形基团。本发明的聚合物和光阻可以表现出对等离子体刻蚀剂的相当抵抗力。