Investigation of Bis(tributyltin)-Initiated Free Radical Cyclization Reactions of 4-Pentenyl Iodoacetates
作者:Junhua Wang、Chaozhong Li
DOI:10.1021/jo0109568
日期:2002.2.1
free radical cyclization to generate gamma-iodoheptanolactones which easily underwent intramolecular nucleophilicsubstitution to form bicyclic acylium species (7) as the key intermediate. Subsequent attack by iodide ion furnished gamma-lactones while attack by hydroxide ion gave the tetrahydrofuran derivatives.
Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2628745B1
公开(公告)日:2015-03-25
THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20200159120A1
公开(公告)日:2020-05-21
The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3):
where R
1
represents an iodine-containing organic group; and R
2
and R
3
are each independently identical to R
1
, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.
THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20200216670A1
公开(公告)日:2020-07-09
A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3):
where R
1
represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R
2
, R
3
each represent the R
1
or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.
METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20200340806A1
公开(公告)日:2020-10-29
A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.