2-Trifluoromethyl-acrylic acid 2,2,2-trifluoro-1-[4-(2,2,2-trifluoro-1-hydroxy-1-trifluoromethyl-ethyl)-cyclohexyl]-1-trifluoromethyl-ethyl ester | 479072-83-8

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 2-Trifluoromethyl-acrylic acid 2,2,2-trifluoro-1-[4-(2,2,2-trifluoro-1-hydroxy-1-trifluoromethyl-ethyl)-cyclohexyl]-1-trifluoromethyl-ethyl ester
• 英文别名: 2-(Trifluoromethyl)acrylic acid 1-[4-[1-(trifluoromethyl)-2,2,2-trifluoro-1-hydroxyethyl]cyclohexyl]-1-(trifluoromethyl)-2,2,2-trifluoroethyl ester；[1,1,1,3,3,3-hexafluoro-2-[4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl)cyclohexyl]propan-2-yl] 2-(trifluoromethyl)prop-2-enoate
• CAS: 479072-83-8
• 化学式: C₁₆H₁₃F₁₅O₃
• 分子量: 538.253
• InChiKey: LELCZQZTXBIBSX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.9
• 重原子数：
  34
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.81
• 拓扑面积：
  46.5
• 氢给体数：
  1
• 氢受体数：
  18

反应信息

• 作为产物：
  描述：

  2-(trifluoromethyl)acrylic chloride 、 1,4-bis(2-hydroxyhexafluoroisopropyl)cyclohexane 生成 2-Trifluoromethyl-acrylic acid 2,2,2-trifluoro-1-[4-(2,2,2-trifluoro-1-hydroxy-1-trifluoromethyl-ethyl)-cyclohexyl]-1-trifluoromethyl-ethyl ester
  参考文献：
  名称：

  Vacuum-UV influenced design of polymers and dissolution inhibitors for next generation photolithography

  摘要：

  An overview of our 157 nm photoresist development activities is presented. Examination of the vacuum ultraviolet (VUV) absorbances of fluorinated monomers and polymers has provided knowledge that influenced copolymer design so that resist transparency in the vacuum-UV can be maximized. Partially fluorinated norbornenes and tricyclononenes (TCNs) have been incorporated into copolymers using metal-catalyzed addition and radical initiators. These materials have orders of magnitude higher transparency at 157 nm compared to their hydrocarbon analogues as measured by variable angle spectroscopic ellipsometry (VASE). We have also synthesized fluorinated dissolution inhibitors for use in a three-component resist system. The results of preliminary lithographic evaluations of resists formulated from these polymers are presented. (C) 2003 Elsevier Science B.V. All rights reserved.

  DOI：

  10.1016/s0022-1139(03)00076-9

文献信息

• Resist polymer and method for producing the polymer
  申请人：Yamagishi Takanori

  公开号：US20050287474A1

  公开（公告）日：2005-12-29

  Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined by gel permeation chromatography (GPC).

  本发明解决了现有技术中的问题，提供了一种抗性聚合物，其批次间、反应器间和比例间变化小，不含高聚物，溶解性和储存稳定性优异，适用于细微图案形成，以及其制备方法。本发明提供的抗性聚合物至少具有一个重复单元，其结构可被酸分解以在碱性显影剂中溶解，并具有一个带极性基团的重复单元，以增强与基底的附着力。其特征在于，根据凝胶渗透色谱（GPC）确定的分子量分布中，分子量为100,000或更高的高分子量组分（高聚物）的峰面积占整个峰面积的0.1％或更少。
• Novel thiol compound, copolymer and method for producing the copolymer
  申请人：——

  公开号：US20040181023A1

  公开（公告）日：2004-09-16

  By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1); 1 wherein R 1 is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.

  通过解决先前技术中的异议，提供了一种新型共聚物，适用于涂层聚合物，其在与基材的粘附性方面表现出色，并可作为具有耐久性的聚合物用于更细微的图案形成中的涂层膜，以适应先进的光刻技术，以及一种生产共聚物的方法，以及一种新型硫醇化合物，可用作生产共聚物中的链转移剂。本发明的新型硫醇化合物具有由式（1）表示的结构；其中R1是从具有1到15个碳原子的线性、支链或环状饱和碳氢化合物中选择的二价取代基。
• Cleaning composition for semiconductor substrate and cleaning method
  申请人：JSR CORPORATION

  公开号：US10023827B2

  公开（公告）日：2018-07-17

  A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.

  一种用于半导体基底的清洁组合物含有溶剂和聚合物，聚合物包括氟原子、硅原子或它们的组合。溶剂中水的含量最好不超过 20%（质量百分比）。清洗组合物最好还含有一种非聚合酸的有机酸。有机酸最好是多氢羧酸。聚合物的酸解离常数最好小于有机酸的酸解离常数。有机酸在 25 摄氏度的水中的溶解度最好不低于 5%（质量分数）。有机酸在 25 摄氏度时最好是固体。
• Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process
  申请人：Yamagishi Takanori

  公开号：US20050131184A1

  公开（公告）日：2005-06-16

  Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.

  本发明提供了一种半导体光刻用共聚物的制备工艺，该共聚物适用于用于形成半导体制造所需的微小图案的成膜组合物，其包括在聚合引发剂存在下，在聚合溶剂中对至少两种具有乙烯双键的单体进行自由基聚合，同时使含有单体的溶液中存在聚合抑制组分；以及通过上述工艺制备的半导体光刻用共聚物，该共聚物不含高聚物，具有优异的贮存稳定性，用于半导体光刻时产生的抗蚀图案缺陷显著减少。
• CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD
  申请人：JSR CORPORATION

  公开号：US20160032227A1

  公开（公告）日：2016-02-04

  A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.