Provided is a composition for forming a metal oxide semiconductor that includes a solvent represented by general formula [1] and an inorganic metal salt. (In the formula, R1 represents a linear or branched C2-3 alkylene group, and R2 represents a linear or branched C1-3 alkyl group.)
本发明提供了一种用于形成金属氧化物半导体的组合物,该组合物包括通式[1]表示的溶剂和无机
金属盐(式中,R1代表直链或支链C2-3亚烷基,R2代表直链或支链C1-3烷基)。