n-dodecylaminobismethylenephosphonic acid | 856829-90-8

• 分子结构分类: 有机化合物 - 有机酸及其衍生物
• 英文名称: n-dodecylaminobismethylenephosphonic acid
• 英文别名: [1-(Dodecylamino)-2-phosphonoethyl]phosphonic acid
• CAS: 856829-90-8
• 化学式: C₁₄H₃₃NO₆P₂
• 分子量: 373.367
• InChiKey: RPAXFFAYIFYGNV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.4
• 重原子数：
  23
• 可旋转键数：
  15
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  127
• 氢给体数：
  5
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  n-dodecylaminobismethylenephosphonic acid 在 calcium carbonate 作用下， 以 水 为溶剂， 生成 calcium salt of n-dodecylaminobismethylenephosphonic acid
  参考文献：
  名称：

  US6160164

  摘要：

  公开号：

文献信息

• [EN] SURFACTANTS FOR ELECTRONICS PRODUCTS<br/>[FR] TENSIOACTIFS POUR PRODUITS ELECTRONIQUES
  申请人：ADVANSIX RESINS & CHEMICALS LLC

  公开号：WO2021183581A1

  公开（公告）日：2021-09-16

  Pre-texturing agents, etchants, and photoresist stripping agents may be formulated to include one or more surfactants, from one or more surfactant classes, such as derivatives of amino acids that have surface-active properties.

  预贴图剂、蚀刻剂和光刻胶去除剂可以配制成包含一种或多种表面活性剂，来自一种或多种表面活性剂类别，例如具有表面活性特性的氨基酸衍生物。
• Resist stripping composition and process for stripping resist
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1035446A2

  公开（公告）日：2000-09-13

  An aqueous resist stripping composition contains (a) an oxidizing agent, (b) a chelating agent, (c) a water-soluble fluorine compound, and optionally (d) an organic solvent. Also provided is a process of stripping resist films and resist residues remaining after etching treatment utilizing the aqueous resist stripping composition. In the process, corrosion of semiconductor materials, circuit-forming materials, insulating films, etc. is minimized and the rinsing is sufficiently made with only water without needing organic solvent such as alcohol.

  一种水性抗蚀剂剥离组合物含有 (a) 氧化剂、(b) 螯合剂、(c) 水溶性氟化合物和 (d) 有机溶剂。此外，还提供了一种利用水性抗蚀剂剥离组合物剥离抗蚀剂薄膜和蚀刻处理后残留的抗蚀剂的工艺。在该工艺中，对半导体材料、电路形成材料、绝缘膜等的腐蚀可降至最低，而且只需用水冲洗即可，无需使用酒精等有机溶剂。
• NOVEL DETERGENT AND CLEANING METHOD USING IT
  申请人：SHARP KABUSHIKI KAISHA

  公开号：EP1049141A1

  公开（公告）日：2000-11-02

  A cleaning agent which comprises 0.1 to 60% by weight of an oxidizing agent and 0.0001 to 5% by weight of a chelating agent. In the process for producing semiconductor integrated circuits, a pattern layer of a photoresist used as an etching mask and residues formed from the photoresist by dry etching can be easily removed with the cleaning agent. In the process for producing substrates for liquid crystal display panels, residues derived from a conductive thin film formed by dry etching can also be easily removed. In the cleaning processes using the cleaning agent, wiring materials or insulating materials in thin film circuit devices or other materials used for producing substrates of semiconductor integrated circuits and liquid crystal panels are not corroded.

  一种清洁剂，由 0.1%至 60%（按重量计）的氧化剂和 0.0001%至 5%（按重量计）的螯合剂组成。在生产半导体集成电路的过程中，作为蚀刻掩膜的光刻胶图案层和通过干法蚀刻从光刻胶上形成的残留物可以很容易地用清洁剂去除。在生产液晶显示屏基板的过程中，通过干法蚀刻形成的导电薄膜的残留物也很容易去除。在使用清洁剂的清洁过程中，薄膜电路装置中的布线材料或绝缘材料或其他用于生产半导体集成电路和液晶面板基板的材料不会被腐蚀。
• Alkaline post-chemical mechanical planarization cleaning compositions
  申请人：AIR PRODUCTS AND CHEMICALS, INC.

  公开号：EP1577934A1

  公开（公告）日：2005-09-21

  A post-CMP cleaning composition and method comprising same are disclosed herein. In one aspect, there is provided a composition comprising: water, an organic base, and a plurality of chelating agents comprised of a poly-amino carboxylic acid and a hydroxyl carboxylic acid wherein the pH of the composition ranges from 9.5 to 11.5.

  本文公开了一种 CMP 后清洗组合物和包含该组合物的方法。在一个方面，提供了一种组合物，其中包括：水、有机碱和由聚氨基羧酸和羟基羧酸组成的多种螯合剂，其中组合物的 pH 值为 9.5 至 11.5。
• ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP1895577A1

  公开（公告）日：2008-03-05

  The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.

  本发明提供了一种蚀刻剂组合物，用于在生产半导体器件时选择性地蚀刻金属材料，蚀刻剂组合物由具有高介电常数的绝缘材料、氧化硅膜或氮化硅膜绝缘材料和金属材料组成，其特征在于蚀刻剂组合物是一种水溶液，含有一种氟化合物和一种螯合剂，螯合剂的分子结构中以氧化磷酸为官能团；或者是含有氟化合物、分子结构中以氧化磷酸为官能团的螯合剂以及无机酸和/或有机酸的水溶液。本发明还提供了一种使用蚀刻剂组合物生产半导体器件的方法。根据本发明，可以选择性地、高效地蚀刻金属材料。