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3-甲氧基-3-甲基-戊-1-烯 | 134777-62-1

中文名称
3-甲氧基-3-甲基-戊-1-烯
中文别名
——
英文名称
3-methoxy-3-methyl-pent-1-ene
英文别名
3-Methoxy-3-methyl-pent-1-en;3-Methoxy-3-methyl-1-pentene;3-methoxy-3-methylpent-1-ene
3-甲氧基-3-甲基-戊-1-烯化学式
CAS
134777-62-1
化学式
C7H14O
mdl
——
分子量
114.188
InChiKey
ZOECPUYYGPRQJH-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.8
  • 重原子数:
    8
  • 可旋转键数:
    3
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.71
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • POLYMER COMPOSITIONS
    申请人:Zhao Ming
    公开号:US20100015441A1
    公开(公告)日:2010-01-21
    Polymers are described that are prepared from di and mono-functional silicone and silane monomers of Formula 1 in which Y represents a direct bond or a oxy group; R 1 represents an optionally substituted organo group with at least one double bond which optionally may be an activated unsaturated moiety such as a (meth)acrylate group: for example 1-n-propoxy(acrylate) or ethenyl; and R 2 and R 3 each separately, and independently within each optional repeat unit, represent an optionally substituted hydrocarbo, hydrocarbo(oxy), hydrosilico and/or hydrosilico(oxy) groups; or example, methyl; or trimethylsiloxy; R 4 independently represents an optionally substituted organo group with at least one double bond (such as R 1 above) an optionally substituted hydrocarbo, and/or hydrosilico group for example trimethylsilyl or ethenyl; and n is from about 0 to about 2000; preferably from about 1 to about 100, for example n is 1. Such polymer precursors can be used to prepare flow modifying agents, defoamers and/or pressure sensitive adhesives.
  • RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE
    申请人:Watanabe Takeru
    公开号:US20110195362A1
    公开(公告)日:2011-08-11
    There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
  • US8227086B2
    申请人:——
    公开号:US8227086B2
    公开(公告)日:2012-07-24
  • US8835092B2
    申请人:——
    公开号:US8835092B2
    公开(公告)日:2014-09-16
  • Nasarow; Aserbajew; Raktschejewa, Zhurnal Obshchei Khimii, 1948, vol. 18, p. 408,411
    作者:Nasarow、Aserbajew、Raktschejewa
    DOI:——
    日期:——
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