1-Adamantylcarbinyl-ethylether | 14651-41-3

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-Adamantylcarbinyl-ethylether
• 英文别名: 1-(Ethoxymethyl)adamantane
• CAS: 14651-41-3
• 化学式: C₁₃H₂₂O
• 分子量: 194.317
• InChiKey: ZDROVOQYOSQLPH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  1-金刚烷甲酸 在 lithium aluminium tetrahydride 作用下， 生成 1-Adamantylcarbinyl-ethylether
  参考文献：
  名称：

  Solvolysis of 1-Adamantylcarbinyl and 3-Homoadamantyl Derivatives. Mechanism of the Neopentyl Cation Rearrangement¹

  摘要：

  DOI：

  10.1021/ja00971a032

文献信息

• RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170115566A1

  公开（公告）日：2017-04-27

  A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

  一种抗蚀组合物包括基树脂，其中包含含酸敏感基团的重复单元，最好包含含酸发生剂的重复单元，以及与烷基、烯基、炔基或芳基结合的α-氟磺酸的钠、镁、钾、钙、铷、锶、钇、铯、钡或铈盐，表现出高分辨率和灵敏度，并在曝光和显影后形成具有最小LWR的满意轮廓图案。
• LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：HASEGAWA Koji

  公开号：US20090233242A1

  公开（公告）日：2009-09-17

  Lactone-containing compounds having formula (1) are novel wherein R 1 is H, F, methyl or trifluoromethyl, R 2 and R 3 are H or monovalent hydrocarbon groups, or R 2 and R 3 may together form an aliphatic hydrocarbon ring, R 4 is H or CO 2 R 5 , R 5 is a monovalent hydrocarbon group, W is CH 2 , O or S, and k 1 is 3, 4 or 5. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.

  含有式（1）的内酯化合物是新颖的，其中R1为H、F、甲基或三氟甲基，R2和R3为H或一价碳氢基团，或R2和R3可以共同形成脂肪烃环，R4为H或CO2R5，R5为一价碳氢基团，W为CH2、O或S，k1为3、4或5。它们可用作单体以生产对辐射≦500纳米透明的聚合物。包含这些聚合物作为基础树脂的辐射敏感抗蚀组合物表现出优异的性能，包括分辨率、LER、图案密度依赖性和曝光余量。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062373A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, Y is H or OH, at least one Y being OH, and the wavy line indicates an indefinite direction of the bond. The composition is improved in resolution when processed by lithography.

  一种正相光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非脱离羟基的重复单元，其中R1是H、甲基或三氟甲基，Y是H或OH，至少一个Y为OH，并且波浪线表示键的不确定方向。该组合物在光刻加工时具有更好的分辨率。
• SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180099928A1

  公开（公告）日：2018-04-12

  A sulfonium compound having formula (1) is provided wherein R 1 , R 2 and R 3 are a C 1 -C 20 monovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse.

  提供了一个具有式（1）的磺鎓化合物，其中R1，R2和R3是C1-C20单价含有杂原子的碳氢基团，p = 0-5，q = 0-5，r = 0-4。利用光刻技术处理含有该磺鎓化合物的抗蚀剂组合物，可形成具有改善的LWR和图案崩溃的抗蚀剂图案。
• RESIST UNDERLAYER FILM COMPOSTION, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170018436A1

  公开（公告）日：2017-01-19

  The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.

  本发明提供了一种用于光刻的抗蚀底层膜组合物，包含具有茚并芴结构的化合物。这种抗蚀底层膜组合物具有优异的填充性能，产生少量气体释放，并具有高耐热性。