Non-ionic photo-acid generating (PAG) compounds were prepared that contain an aryl ketone group. The disclosed non-polymeric PAGs release a strong sulfonic acid when exposed to high energy radiation such as deep UV or extreme UV light. The photo-generated sulfonic acid has a low diffusion rate in an exposed resist layer subjected to a post-exposure bake (PEB) at 100° C. to 150° C., resulting in formation of good line patterns after development. At higher temperatures, the PAGs undergo a thermal reaction to form a sulfonic acid.
制备了含芳基酮基团的非离子光酸发生(PAG)化合物。揭示的非聚合物PAG在暴露于高能辐射(如深紫外或极紫外光)时释放出强
磺酸。光生
磺酸在经过后曝光烘烤(PEB)处理(在100°C至150°C下)的受暴露光阻层中具有低扩散速率,从而在显影后形成良好的线条图案。在较高温度下,PAG会发生热反应形成
磺酸。