2,2,5,5-tetramethyl-1,6-duiphenylhexane-1,6-dione | 125611-53-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2,2,5,5-tetramethyl-1,6-duiphenylhexane-1,6-dione
• 英文别名: 2,2,5,5-Tetramethyl-1,6-diphenylhexane-1,6-dione
• CAS: 125611-53-2
• 化学式: C₂₂H₂₆O₂
• 分子量: 322.447
• InChiKey: JCFKGCHABDIKEY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.4
• 重原子数：
  24
• 可旋转键数：
  7
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.36
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,2,5,5-tetramethyl-1,6-duiphenylhexane-1,6-dione 在 劳森试剂 作用下， 以 甲苯 、 xylene 为溶剂， 反应 107.0h， 生成 2,2,5,5-Tetramethyl-1,6-diphenyl-7,8-dithiabicyclo[4.1.1]octane
  参考文献：
  名称：

  Sulfurization of nonenolizable diketones

  摘要：

  DOI：

  10.1021/jo00295a034
• 作为产物：
  描述：

  2,5-dicyano-2,5-dimethylhexane 、 苯基锂 以 乙醚 、 苯 为溶剂， 反应 1.5h， 以82%的产率得到2,2,5,5-tetramethyl-1,6-duiphenylhexane-1,6-dione
  参考文献：
  名称：

  Sulfurization of nonenolizable diketones

  摘要：

  DOI：

  10.1021/jo00295a034

文献信息

• METHOD FOR FORMING FERROELECTRIC THIN FILM
  申请人：DAIKIN INDUSTRIES, LIMITED

  公开号：EP1607986A1

  公开（公告）日：2005-12-21

  There is provided a method of forming a ferroelectric thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.). The method of forming a ferroelectric thin film comprising vinylidene fluoride homopolymer comprises the step (i) for preparing a green powder of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a radical polymerization initiator, the step (ii) for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component, and the step (iii) for subjecting the thin film of vinylidene fluoride homopolymer formed in the step of above (ii) to polarization.

  本发明提供了一种具有晶型 I 的偏氟乙烯均聚物铁电薄膜的形成方法，该方法可 以相对简便地适用于各种基底（涂覆条件、应用方法等）。形成包含偏氟乙烯均聚物的铁电薄膜的方法包括以下步骤 (i)：在自由基聚合引发剂存在下，将偏氟乙烯进行自由基聚合，制备单独或作为主要成分包含晶型 I 的偏氟乙烯均聚物的绿色粉末、步骤(ii)使用由单独或作为主要成分的晶体形式 I 构成的偏氟乙烯均聚物在基材表面形成薄膜，该薄膜由单独或作为主要成分的晶体形式 I 构成的偏氟乙烯均聚物的绿色粉末产品获得，以及步骤(iii)将上述步骤(ii)中形成的偏氟乙烯均聚物薄膜进行极化。
• PROCESS FOR FORMING VINYLIDENE FLUORIDE HOMOPOLYMER THIN FILMS
  申请人：DAIKIN INDUSTRIES, LTD.

  公开号：EP1743710A1

  公开（公告）日：2007-01-17

  There is provided the method of forming a thin film of vinylidene fluoride homopolymer of I-form crystal structure having functional group at its end which can be applied to various substrates, by relatively easy method (applying conditions, manner, etc.). The method is a method of forming a thin film of vinylidene fluoride homopolymer by applying, on a substrate, a vinylidene fluoride homopolymer which contains, at one end or both ends thereof, a moiety represented by the formula (1):         -(R1)n-Y     (1) wherein R1 is a divalent organic group but does not contain a structural unit of the vinylidene fluoride homopolymer; n is 0 or 1; Y is a functional group, and has from 3 to 100 repeat units of vinylidene fluoride, to form a thin film of vinylidene fluoride homopolymer comprising I-form crystal structure alone or as main component.

  本发明提供了通过相对简便的方法（涂敷条件、方式等）形成其端部含有官能团的 I 型晶体结构的偏氟乙烯均聚物薄膜的方法，该薄膜可涂敷在各种基材上。该方法是一种通过在基底上涂敷一端或两端含有由式（1）表示的分子的偏氟乙烯均聚物来形成偏氟乙烯均聚物薄膜的方法： -(R1)n-Y (1) 其中 R1 是二价有机基团，但不包含偏氟乙烯均聚物的结构单元；n 是 0 或 1；Y 是官能团，并具有 3 至 100 个偏氟乙烯重复单元，从而形成单独或作为主要成分的包含 I 型晶体结构的偏氟乙烯均聚物薄膜。
• Vinylidene fluoride homopolymer
  申请人：Daikin Industries, Ltd.

  公开号：EP2395031A1

  公开（公告）日：2011-12-14

  There is provided a vinylidene fluoride homopolymer represented by the formula (5) :          I-(A2)-(CF2CF2)m-(A3)-I     (5) wherein m is an integer of 1 to 5; A2 and A3 are the same or different and each is a structural unit of vinylidene fluoride homopolymer comprising crystal form I alone or as main component; the sum of number average degree of polymerization of the structural units A2 and A3 is 2 to 20.

  提供了一种由式（5）表示的偏氟乙烯均聚物： I-(A2)-(CF2CF2)m-(A3)-I (5) 其中 m 为 1 至 5 的整数；A2 和 A3 相同或不同，且各自为单独或作为主要成分包含晶型 I 的偏氟乙烯均聚物的结构单元；结构单元 A2 和 A3 的平均聚合度之和为 2 至 20。
• Method of forming thin film
  申请人：Araki Takayuki

  公开号：US20060014912A1

  公开（公告）日：2006-01-19

  There is provided a method of forming a thin film of vinylidene fluoride homopolymer having crystal form I which is applicable to various substrates in relatively easy way (coating conditions, application method, etc.), a process for preparing a vinylidene fluoride homopolymer having crystal form I efficiently at high purity, and novel vinylidene fluoride homopolymers which can give a thin film being excellent in ferroelectricity. The method of forming a thin film of vinylidene fluoride homopolymer comprises (i) a step for preparing a green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component by subjecting vinylidene fluoride to radical polymerization in the presence of a bromine compound or iodine compound having 1 to 20 carbon atoms which contains at least one moiety represented by —CRf 1 Rf 2 X 1 , wherein X 1 is iodine atom or bromine atom; Rf 1 and Rf 2 are the same or different and each is selected from fluorine atom or perfluoroalkyl groups having 1 to 5 carbon atoms and (ii) a step for forming a thin film on a substrate surface by using vinylidene fluoride homopolymer which comprises crystal form I alone or as main component and is obtained from the green powder product of vinylidene fluoride homopolymer comprising crystal form I alone or as main component.

  本发明提供了一种以相对简便的方式（涂覆条件、涂覆方法等）形成适用于各种基材的具有晶型 I 的偏氟乙烯均聚物薄膜的方法、一种以高纯度高效制备具有晶型 I 的偏氟乙烯均聚物的工艺，以及一种可生成铁电性优异的薄膜的新型偏氟乙烯均聚物。形成偏氟乙烯均聚物薄膜的方法包括：(i)制备单独或作为主要成分包含晶型 I 的偏氟乙烯均聚物绿色粉末产品的步骤，该步骤是将偏氟乙烯在具有 1 至 20 个碳原子的溴化合物或碘化合物存在下进行自由基聚合，该溴化合物或碘化合物至少含有一个由 -CRf 表示的分子 1 Rf 2 X 1 其中 X 1 是碘原子或溴原子； Rf 1 和 Rf 2 (ii) 使用单独或作为主要成分的偏氟乙烯均聚物在基材表面形成薄膜的步骤，该均 聚物由单独或作为主要成分的晶体形式 I 构成，并从单独或作为主要成分的偏氟乙烯均 聚物的绿色粉末产品中获得。
• Cyclic ether copolymer, coating resin composition, optical devices, and process for production of the devices
  申请人：Araki Takayuki

  公开号：US20060189788A1

  公开（公告）日：2006-08-24

  This invention provides a cyclic ether copolymer such as a cyclic ether copolymer excellent in solubility in solvents and easy to form uniform thin films therefrom. The present invention relates to a cyclic ether copolymer obtained from a 1,3-dioxole ring structure-containing compound represented by the following general formula (I) and an ethylenically unsaturated monomer: (wherein R 1 and R 2 are the same or different and each represents F, H, Cl or a perfluoroalkyl group containing 1 to 5 carbon atoms and X 1 and X 2 are the same or different and each represents F, H, Cl or —OR 3 , and R 3 represents a perfluoroalkyl group containing 1 to 5 carbon atoms, provided that at least one of R 1 and R 2 is F or a perfluoroalkyl group containing 1 to 5 carbon atoms), which compolymer has a glass transition point of 100 to 135° C. and an intrinsic viscosity of 0.01 to 0.4 dl/g as determined at 35° C. in perfluoro-2-butyltetrahydrofuran.

  本发明提供了一种环醚共聚物，如在溶剂中溶解性极佳且易于形成均匀薄膜的环醚共聚物。本发明涉及一种环醚共聚物，由下式通式（I）表示的含 1，3-二恶茂环结构的化合物和乙烯基不饱和单体得到： (其中 R 1 和 R 2 相同或不同，各自代表 F、H、Cl 或含有 1 至 5 个碳原子的全氟烷基，以及 X 1 和 X 2 相同或不同，且各自代表 F、H、Cl 或 -OR 3 和 R 3 代表含有 1 至 5 个碳原子的全氟烷基，条件是 R 1 和 R 2 是 F 或含有 1 至 5 个碳原子的全氟烷基），该共聚物的玻璃化转变点为 100 至 135 摄氏度，在 35 摄氏度的全氟-2-丁基四氢呋喃中测定的固有粘度为 0.01 至 0.4 分升/克。