Thermally Activated n‐Doping of Organic Semiconductors Achieved by N‐Heterocyclic Carbene Based Dopant
作者:Yi‐Fan Ding、Chi‐Yuan Yang、Chun‐Xi Huang、Yang Lu、Ze‐Fan Yao、Chen‐Kai Pan、Jie‐Yu Wang、Jian Pei
DOI:10.1002/anie.202011537
日期:2021.3.8
density of organic semiconductors thus enhancing their optoelectronic performance. However, efficient n‐doping remains challenging, especially owing to the lack of strongly reducing and air‐stable n‐dopants. Herein, an N‐heterocyclic carbene (NHC) precursor, DMImC, is developed as a thermally activated n‐dopant with the excellent stability in air. Its thermolysis in situ regenerates free NHC and subsequently
分子掺杂在有机半导体载流子密度的改变中起着重要作用,从而增强了它们的光电性能。但是,有效的n掺杂仍然具有挑战性,特别是由于缺乏强烈还原且稳定的n掺杂剂。在此,开发了一种N-杂环卡宾(NHC)前驱体DMImC,它是一种热活化的n-掺杂剂,在空气中具有出色的稳定性。其原位热解可再生游离的NHC,并随后掺杂典型的有机半导体。在顺序掺杂的FBDPPV薄膜中,DMImC不会干扰聚合物的π-π堆积,并能与聚合物实现良好的混溶性。结果,高达8.4 S cm -1的高电导率获得。此外,热激活掺杂和出色的空气稳定性使DMImC可以与空气中的聚合物进行非交互共处理。我们的结果表明,DMImC可以用作适用于各种有机半导体的有效n掺杂剂。