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β-Isobutyloxy-aethylamin | 89585-16-0

中文名称
——
中文别名
——
英文名称
β-Isobutyloxy-aethylamin
英文别名
2-Isobutyloxy-aethanolamin;2-(2-Methylpropoxy)ethan-1-amine;2-(2-methylpropoxy)ethanamine
β-Isobutyloxy-aethylamin化学式
CAS
89585-16-0
化学式
C6H15NO
mdl
MFCD06247813
分子量
117.191
InChiKey
ZSLFISNFWCDEIC-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    0.5
  • 重原子数:
    8
  • 可旋转键数:
    4
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    35.2
  • 氢给体数:
    1
  • 氢受体数:
    2

反应信息

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文献信息

  • [EN] DIFLUOROMETHYL-AMINOPYRIDINES AND DIFLUOROMETHYL-AMINOPYRIMIDINES<br/>[FR] DIFLUOROMÉTHYL-AMINOPYRIDINES ET DIFLUOROMÉTHYL-AMINOPYRIMIDINES
    申请人:PIQUR THERAPEUTICS AG
    公开号:WO2016075130A1
    公开(公告)日:2016-05-19
    The invention relates to novel phosphoinositide 3-kinase (PI3K),mammalian target of rapamycin (mTOR)and PI3K-related kinase(PIKKs)inhibitor compounds of formula (I), wherein X1, X2 and X3 are N or CH, with the proviso that at least two of X1, X2 and X3 are N; Y is N or CH, These compounds are useful, either alone or in combination with further therapeutic agents, for treating disorders mediated by lipid kinases.
    这项发明涉及一种新型的磷脂酰肌醇3-激酶(PI3K)、哺乳动物雷帕霉素靶蛋白(mTOR)和PI3K相关激酶(PIKKs)抑制剂化合物,其化学式为(I),其中X1、X2和X3为N或CH,但至少其中两个为N;Y为N或CH。这些化合物可用于单独使用或与其他治疗药物联合使用,用于治疗由脂质激酶介导的疾病。
  • Selective production of N-substituted amides by use of CU(O)/metallic oxides catalyst compositions
    申请人:ALLIED CORPORATION
    公开号:EP0150295A2
    公开(公告)日:1985-08-07
    This invention provides a process for the selective conversion of aliphatic and aromatic aminonitriles, such as epsilon-aminocapronitrile, or mixtures of a primary amine, MNHR2, such as N-butylamine, and a nitrile, MCN, such as acetonitrile, into N-substituted amides, such as epsilon-caprolactam or N-butylacetamide, employing a Cu(O) catalyst in combination with oxides of a Group IVB, VB or VIB metal except chromium. The present invention, also provided a method of preparing a catalyst composition comprising Cu(O), substantially free of oxidized forms of Cu(O) and finely dispersed in oxides of a metal which is Ti, Zr, Hf, V, Nb, Ta, Mo or W, which comprises treating a substance comprising oxidized Cu and metal oxides with hydrogen at a pressure of at least about 100 kPa and at a temperature greater than about 250° C preferably about 350°-450°C for a time sufficient to produce a catalyst composition comprising Cu(O), substantially free of oxidized forms of Cu(O), finely dispersed in the metal oxides. The present invention also contemplates a catalyst composition comprising Cu(O), substantially free of oxides forms of Cu(O) and finely dispersed in oxides of Group IVB, VB or VIB metals except chromium.
    本发明提供了一种将脂肪族和芳香族氨基腈(如ε-氨基己腈)或伯胺、MNHR2(如 N-丁胺)和腈的混合物选择性转化为 N-取代酰胺(如ε-己内酰胺或 N-丁基乙酰胺)的工艺、MCN,如乙腈,转化成 N-取代的酰胺,如epsilon-己内酰胺或 N-丁基乙酰胺,使用 Cu(O) 催化剂与除铬以外的 IVB、VB 或 VIB 族金属的氧化物结合。本发明还提供了一种制备催化剂组合物的方法,该催化剂组合物包含 Cu(O),基本上不含氧化形式的 Cu(O),并精细分散于 Ti、Zr、Hf、V、Nb、Ta、Mo 或 W 金属的氧化物中、其中包括用氢气在压力至少约 100 kPa 和温度高于约 250°C(最好约 350°C-450°C)的条件下处理由氧化 Cu 和金属氧化物组成的物质,处理时间足以产生由 Cu(O)组成的催化剂组合物,Cu(O)基本上不含氧化形式的 Cu(O),并细小地分散在金属氧化物中。本发明还考虑了一种催化剂组合物,该催化剂组合物包括基本不含氧化形式的 Cu(O),并细小地分散在除铬以外的 IVB、VB 或 VIB 族金属的氧化物中。
  • Quinoline derivative and use of same
    申请人:MITSUI TOATSU CHEMICALS, Inc.
    公开号:EP0818512A1
    公开(公告)日:1998-01-14
    Quinoline compound, zinc halogenide complex and zinc complex suited for use in an electro-luminescence element, a fluorescent material and an ultraviolet absorption material, and a preparation process for these compounds are described. These compounds and a tautomer of the same has a strong luminescent intensity and is used for an EL material, the compound of zinc halogenide complex and zinc complex and a tautomer of the same has absorption at a wave length of 400nm or less and is used for an ultraviolet absorption material, and further the quinoline compound and a tautomer has a strong luminescent intensity and is used for a fluorescent material. The zinc halogenide complex and zinc complex can be prepared by each other related preparation processes directly from a quinoline derivative and a phthalimide derivative, or by way of the quinoline compound which is obtained from these derivatives.
    描述了适用于电致发光元件、荧光材料和紫外线吸收材料的喹啉化合物、卤化锌络合物和锌络合物,以及这些化合物的制备工艺。 这些化合物及其同系物具有很强的发光强度,可用于电致发光材料;卤化锌络合物和锌络合物的化合物及其同系物在波长为 400nm 或以下时有吸收,可用于紫外线吸收材料;此外,喹啉化合物及其同系物具有很强的发光强度,可用于荧光材料。 卤化锌络合物和锌络合物可以直接从喹啉衍生物和邻苯二甲酰亚胺衍生物,或通过从这些衍生物中得到的喹啉化合物,通过彼此相关的制备工艺制备。
  • ORGANIC SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME, COMPOUND, ORGANIC SEMICONDUCTOR COMPOSITION AND ORGANIC SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SAME
    申请人:FUJIFILM Corporation
    公开号:EP3258513A1
    公开(公告)日:2017-12-20
    Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film. The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.         (̵D-A)̵     (1)
    本发明的目的是提供一种载流子迁移率高、迁移率变化受抑制、高温高湿条件下的时间稳定性优异的有机半导体元件及其制造方法,提供一种适用于有机半导体的新型化合物,并提供一种迁移率高、迁移率变化受抑制、高温高湿条件下的时间稳定性优异的有机半导体薄膜及其制造方法,以及一种可适当形成该有机半导体薄膜的有机半导体组合物。 根据本发明的有机半导体元件是一种有机半导体层,其中含有一种化合物,该化合物具有由式 1 表示的构型重复单元,且分子量大于等于 2,000。 (̵D-A)̵ (1)
  • Organic semiconductor element, manufacturing method thereof, compound, organic semiconductor composition, organic semiconductor film, and manufacturing method thereof
    申请人:FUJIFILM CORPORATION
    公开号:US10312447B2
    公开(公告)日:2019-06-04
    Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film. The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater. D-A  (1)
    本发明的目的是提供一种载流子迁移率高、迁移率变化受抑制、高温高湿条件下的时间稳定性优异的有机半导体元件及其制造方法,提供一种适用于有机半导体的新型化合物,并提供一种迁移率高、迁移率变化受抑制、高温高湿条件下的时间稳定性优异的有机半导体薄膜及其制造方法,以及一种可适当形成该有机半导体薄膜的有机半导体组合物。 根据本发明的有机半导体元件是一种有机半导体层,其中含有一种化合物,该化合物具有由式 1 表示的构型重复单元,且分子量大于等于 2,000。 D-A (1)
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