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4,5,4'',5''-tetraphenyl-2,2',5',2''-tetrabromo-1,1',4',1''-terphenyl | 912922-65-7

中文名称
——
中文别名
——
英文名称
4,5,4'',5''-tetraphenyl-2,2',5',2''-tetrabromo-1,1',4',1''-terphenyl
英文别名
4,5,4",5"-tetraphenyl-2,2',5',2"-tetrabromo-1,1',4',1"-terphenyl;1,4-Dibromo-2,5-bis(2-bromo-4,5-diphenylphenyl)benzene
4,5,4'',5''-tetraphenyl-2,2',5',2''-tetrabromo-1,1',4',1''-terphenyl化学式
CAS
912922-65-7
化学式
C42H26Br4
mdl
——
分子量
850.284
InChiKey
RURDFMHPZJBNLG-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    733.5±55.0 °C(Predicted)
  • 密度:
    1.557±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    14.4
  • 重原子数:
    46
  • 可旋转键数:
    6
  • 环数:
    7.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • TERPHENYLENE DERIVATIVE, TETRAHALOTERPHENYL DERIVATIVE, AND PROCESSES FOR PRODUCING BOTH
    申请人:Watanabe Makoto
    公开号:US20090023957A1
    公开(公告)日:2009-01-22
    An object of the present invention relates to provision of a terphenylene derivative having excellent oxidation resistance and capable of forming a semiconductor active phase by a coating process and an oxidation-resistant organic semiconductor material using the sane, as well as an organic thin film. The invention relates to production of a terphenylene derivative represented by the formula (1) by tetralithiating a tetrahaloterphenyl derivative with a lithiating agent and subsequently treating the resulting compound with a copper compound: wherein R 1 to R 14 are the same or different and each represents a hydrogen atom, a fluorine atom, a chlorine atom, an aryl group having 4 to 30 carbon atoms, an alkynyl group having 3 to 20 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an alkyl group having 1 to 20 carbon atoms or a halogenated alkyl group having 1 to 20 carbon atoms, or a diarylamino group having 8 to carbon atoms; and l, m, and n each represents an integer of 0 or 1.
    本发明涉及一种提供具有优异氧化抗性并能通过涂覆过程形成半导体活性相的三苯基乙烯衍生物以及使用该衍生物的抗氧化有机半导体材料,以及有机薄膜。本发明涉及通过使用锂化试剂四锂化四卤代三苯基衍生物,然后用铜化合物处理所得化合物的方法制备由式(1)表示的三苯基乙烯衍生物的生产方法:其中R1至R14相同或不同,分别表示氢原子,氟原子,氯原子,具有4到30个碳原子的芳基基团,具有3到20个碳原子的炔基基团,具有2到30个碳原子的烯基基团,具有1到20个碳原子的烷基基团或具有1到20个碳原子的卤代烷基基团,或具有8到碳原子的二芳胺基团; l,m和n各代表0或1的整数。
  • HETEROACENE DERIVATIVE, TETRAHALOTERPHENYL DERIVATIVE, AND PROCESSES FOR PRODUCING THE SAME
    申请人:Watanabe Makoto
    公开号:US20090261300A1
    公开(公告)日:2009-10-22
    There are provided a heteroacene derivative having an excellent oxidation resistance and capable of forming a semiconductor active phase by a coating process, and an oxidation-resistant organic semiconductor material using the same, as well as an organic thin film. [Means for Resolution] A heteroacene derivative represented by the formula (1) is obtained by tetrametalation of a tetrahaloterphenyl derivative with a metalation agent and subsequent treatment of the resulting compound with reaction agents: wherein the substituents R 1 to R 4 are the same or different and each represents a hydrogen atom, a fluorine atom, a chlorine atom, an aryl group having 4 to 30 carbon atoms, an alkyl group having 3 to 20 carbon atoms, or a halogenated alkyl group having 1 to 20 carbon atoms; T 1 and T 2 are the same or different and each represents sulfur, selenium, tellurium, oxygen, phosphorus, boron, or aluminum; l and m each is an integer of 0 or 1; and rings A and B are the same or different and each has a structure represented by the following formulae (A- 1 ) or (A-2).
    提供了一种具有优异氧化抗性并能够通过涂层工艺形成半导体活性相的杂环芳烃衍生物以及使用该衍生物的抗氧化有机半导体材料,以及有机薄膜。[解决方案] 通过使用金属化试剂四甲基化四卤代苯衍生物并随后用反应试剂处理所得化合物,获得了由式(1)表示的杂环芳烃衍生物:其中取代基R1至R4相同或不同,每个代表氢原子、氟原子、氯原子、具有4至30个碳原子的芳基、具有3至20个碳原子的烷基或具有1至20个碳原子的卤代烷基;T1和T2相同或不同,每个代表硫、硒、碲、氧、磷、硼或铝;l和m各自为0或1的整数;环A和环B相同或不同,每个具有以下式(A-1)或(A-2)所表示的结构。
  • TERPHENYLENE DERIVATIVES, TETRAHALOTERPHENYL DERIVATIVES AND PROCESSES FOR THE PRODUCTION OF BOTH
    申请人:TOSOH CORPORATION
    公开号:EP1867623B1
    公开(公告)日:2017-05-10
  • US7985885B2
    申请人:——
    公开号:US7985885B2
    公开(公告)日:2011-07-26
  • US8138355B2
    申请人:——
    公开号:US8138355B2
    公开(公告)日:2012-03-20
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