Substituent Effects in Digermanes: Electrochemical, Theoretical, and Structural Investigations
作者:Erin K. Schrick、Trevor J. Forget、Kimberly D. Roewe、Aaron C. Schrick、Curtis E. Moore、James A. Golen、Arnold L. Rheingold、Nicholas F. Materer、Charles S. Weinert
DOI:10.1021/om400132z
日期:2013.4.8
four digermanes and the four additional digermanes R3GeGePh3 (R3 = Me3, Bun3, Bus3, or PhMe2) were characterized by cyclic voltammetry, differential pulse voltammetry, and linear sweep voltammetry in order to determine the effects of varying substituent patterns on the oxidation potential of these systems. Digermanes having more inductively donating substituents exhibit more negative oxidation potentials
所述digermanes - [R 3 GeGePh 3(R 3 =卜我3,六角Ñ 3,(C 18 H ^ 37)3,或卜吨我2)使用所述hydrogermolysis反应合成和Bu的X射线晶体结构我3 GeGePh 3和卜吨我2 GeGePh 3进行了测定。异丁基取代的乙锗烷包含具有2.4410(5)和2.4409(5)的Ge-Ge结合的距离的单元电池的两个独立分子和Bu吨我2 GeGePh3的Ge–Ge键距为2.4255(3)Å。这四个Digermanes和四个附加Digermanes R 3 GeGePh 3(R 3 = Me 3,Bu n 3,Bu s 3或PhMe 2通过循环伏安法,差动脉冲伏安法和线性扫描伏安法表征),以确定变化的取代基图案对这些系统的氧化电势的影响。与具有较少的感应供电的取代基的那些相比,具有更多的感应供电的取代基的Digermanes表现出更多的负氧化电势。