申请人:NIPPON TELEGRAPH AND TELEPHONE CORPORATION
公开号:EP0122398A2
公开(公告)日:1984-10-24
A pattern forming material contains a siloxane polymer having the general formula:
[wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a -CHzY group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and I, m and n are respectively 0 or a positive integer, I and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
一种图案形成材料含有通式如下的硅氧烷聚合物:
[其中R、R'和R "相同或不同,并分别选自氢、烷基或苯基;X是选自氟、氯、溴、碘和-CHzY基团(其中Y是选自氯、氟、溴、碘、丙烯酰氧基、甲基丙烯酰氧基和肉桂酰氧基的一个成员)的一个成员;以及I、m和n分别为0或正整数,I和m不能同时为0]。该材料对高能辐射具有高灵敏度、高对比度,并且在氧气环境下具有优异的抗活性离子蚀刻性能。该材料可方便地用作形成高纵横比亚微米图案的负型抗蚀剂。