Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
申请人:Ohsawa Youichi
公开号:US20100119970A1
公开(公告)日:2010-05-13
There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and
wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher.
RCOO—CH
2
CF
2
SO
3
−
H
+
(1)
There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.
NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Ohsawa Youichi
公开号:US20090246694A1
公开(公告)日:2009-10-01
Photoacid generators generate sulfonic acids of formula (
1
a) upon exposure to high-energy radiation.
ROC(═O)R
1
—COOCH
2
CF
2
SO
3
−
H
+
(1a)
RO is OH or C
1
-C
20
organoxy, R
1
is a divalent C
1
-C
20
aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.
POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20100099042A1
公开(公告)日:2010-04-22
A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R
1
is H, F, methyl or trifluoromethyl, R
2
, R
3
and R
4
are C
1
-C
10
alkyl, alkenyl or oxoalkyl or C
6
-C
18
aryl, aralkyl or aryloxoalkyl, or two of R
2
, R
3
and R
4
may bond together to form a ring with S, A is a C
2
-C
20
hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:OHASHI Masaki
公开号:US20090274978A1
公开(公告)日:2009-11-05
Photoacid generators generate sulfonic acids of formula (1a) or (1b) upon exposure to high-energy radiation.
R
1
—COOCH
2
CF
2
SO
3
−
H
+
(1a)
R
1
—O—COOCH
2
CF
2
SO
3
−
H
+
(1b)
R
1
is a monovalent C
20
-C
50
hydrocarbon group of steroid structure which may contain a heteroatom. The bulky steroid structure ensures adequate control of acid diffusion. The photoacid generators are compatible with resins and suited for use in chemically amplified resist compositions.
PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
申请人:Ohashi Masaki
公开号:US20110003247A1
公开(公告)日:2011-01-06
The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.