Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes
摘要:
新型碲化物包含富瓦烯类电子供体三硒化碲富瓦烯(TSTeF)和二硒化二碲富瓦烯(DSDTeF),可通过高效的两步或三步合成工艺合成。它们作为优异的电子供体,与TCNQ形成高导电性的电荷转移(CT)复合物。TSTeF-TCNQ在室温下表现出2000 S cm-1的高导电性,在85 K以下为金属态,在此温度下发生金属-绝缘体(MI)转变。相比之下,DSDTeF-TCNQ在室温下的导电性为1400 S cm-1,在4.2 K以下单调增加,没有发生MI转变。X射线结构分析显示,TSTeF-TCNQ与TTF-TCNQ在晶体结构上具有同构性,包含典型的一维供体和受体柱。另一方面,DSDTeF-TCNQ的晶体结构特征是准一维供体堆叠,通过Te-Se接触形成并排的柱间相互作用,从而在低温下稳定金属态。
Novel tellurium containing fulvalene-type electron donors, triselenatellurafulvalene (TSTeF) and diselenaditellurafulvalene (DSDTeF); synthesis, conductivities and crystal structures of their TCNQ complexes
摘要:
新型碲化物包含富瓦烯类电子供体三硒化碲富瓦烯(TSTeF)和二硒化二碲富瓦烯(DSDTeF),可通过高效的两步或三步合成工艺合成。它们作为优异的电子供体,与TCNQ形成高导电性的电荷转移(CT)复合物。TSTeF-TCNQ在室温下表现出2000 S cm-1的高导电性,在85 K以下为金属态,在此温度下发生金属-绝缘体(MI)转变。相比之下,DSDTeF-TCNQ在室温下的导电性为1400 S cm-1,在4.2 K以下单调增加,没有发生MI转变。X射线结构分析显示,TSTeF-TCNQ与TTF-TCNQ在晶体结构上具有同构性,包含典型的一维供体和受体柱。另一方面,DSDTeF-TCNQ的晶体结构特征是准一维供体堆叠,通过Te-Se接触形成并排的柱间相互作用,从而在低温下稳定金属态。
A simple one pot synthetic method of a series of 4,5-alkylenedichalcogeno-substituted 1,3-diselenole-2-selones by successive treatments of trimethylsilylacetylene with butyllithium, selenium, carbon diselenide, and finally alpha,omega-bis(chalcogenocyanato)alkanes is described.
Improved Synthesis of Double‐Bridged Tetraselenafulvalenophanes and Formation of Their Conductive Radical Cation Salts
The double-bridged tetraselenafulvalenophanes (TSF-phanes, 4) were efficiently synthesized by a new method using the deprotection/realkylation sequence of the TSF bisthiolate building block jr. Electrocrystallization of 4b with the Au(CN) counter-anion gave a radical cation salt that showed a very high conductivity of 53 S cm(-1) at room temperature. X-ray crystallographic analysis revealed that the crystal structure contained many intra- and intermolecular Se-Se contacts; favorable for high conductivity.