2,4-二甲基-己烷-2,4-二醇 | 29649-22-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 2,4-二甲基-己烷-2,4-二醇
• 英文名称: 2,4-dimethyl-2,4-hexanediol
• 英文别名: 2,4-Dimethyl-hexan-2,4-diol；2,3-Dimethyl-hexandiol-(2,4)；2,4-dimethyl-hexane-2,4-diol；α.α.α'-Trimethyl-α'-aethyl-trimethylenglykol；2,4-dimethylhexane-2,4-diol
• CAS: 29649-22-7
• 化学式: C₈H₁₈O₂
• 分子量: 146.23
• InChiKey: MHNYUMPVQKTSLK-UHFFFAOYSA-N

物化性质

• 沸点：
  98 °C(Press: 5 Torr)
• 密度：
  0.9229 g/cm3(Temp: 20.2 °C)

计算性质

• 辛醇/水分配系数(LogP)：
  1
• 重原子数：
  10
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  2,4-二甲基-己烷-2,4-二醇 在 nickel-aluminium oxide 作用下， 生成 2,4-二甲基己烷
  参考文献：
  名称：

  Jacquemain, Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1942, vol. 215, p. 180

  摘要：

  DOI：
• 作为产物：
  描述：

  二丙酮醇 以55%的产率得到
  参考文献：
  名称：

  KULNEVICH V. G.; ZELIKMAN Z. I.; KOSULINA T. P.; LYUBKE F.-U., TR. KUBAN. YH-T, 1976, VYP. 225, 3-10

  摘要：

  DOI：

文献信息

• Protodeboronation of (Hetero)Arylboronic Esters: Direct versus Prehydrolytic Pathways and Self-/Auto-Catalysis
  作者：Hannah L. D. Hayes、Ran Wei、Michele Assante、Katherine J. Geogheghan、Na Jin、Simone Tomasi、Gary Noonan、Andrew G. Leach、Guy C. Lloyd-Jones

  DOI：10.1021/jacs.1c06863

  日期：2021.9.15

  boronic esters under basic aqueous–organic conditions to be highly nuanced. In contrast to common assumption, esterification does not necessarily impart greater stability compared to the corresponding boronic acid. Moreover, hydrolysis of the ester to the boronic acid can be a dominant component of the overall protodeboronation process, augmented by self-, auto-, and oxidative (phenolic) catalysis when

  一系列硼酸酯的碱催化水解（ArB(OR) 2 → ArB(OH) 2）和原脱硼化（ArB(OR) 2 → ArH）的动力学和机理，包括八种不同的多元醇和 10 种多氟芳基和杂芳基部分，已通过原位和停流 NMR 光谱（19 F、1 H 和11 B）、pH 速率依赖性、同位素夹带进行了研究，2H KIE 和 KS-DFT 计算。该研究揭示了硼酸酯在碱性水-有机条件下的现象稳定性非常微妙。与通常的假设相反，与相应的硼酸相比，酯化不一定赋予更高的稳定性。此外，酯水解为硼酸可以是整个原脱硼过程的主要成分，当 pH 值接近硼酸的 p K a时，自催化、自催化和氧化（酚类）催化作用增强酯。
• Concentrated, stable fabric softening composition
  申请人：——

  公开号：US20030153483A1

  公开（公告）日：2003-08-14

  Principal solvents, especially mono-ol and diol principal solvents, having a ClogP of from about 0.15 to about 0.64, preferably from about 0.25 to about 0.62, and more preferably from about 0.40 to about 0.60, are disclosed that have the ability to make clear aqueous fabric softener compositions containing relatively high concentrations of fabric softener actives having ester linkages in their long, hydrophobic chains. The fabric softener actives are either unsaturated, or have intermediate length chains (˜C 12-14 ) and the said principal solvents are used at levels of less than about 40%. Other solvents may be present. Some of the said principal solvents are novel compounds and/or novel mixtures. Premixes of the fabric softening actives, the principal solvents, and, optionally, other solvents are useful in the preparation of complete formulations by obviating/limiting the need for heating.

  本发明涉及主要溶剂，特别是具有从约0.15到约0.64的ClogP值的单醇和二醇主要溶剂，优选从约0.25到约0.62，更优选从约0.40到约0.60，具有使含有长的亲水性链中的酯键的织物柔软剂活性成分相对高浓度的清澈水性织物柔软剂组合物的能力。织物柔软剂活性成分可以是不饱和的，也可以具有中等长度的链（约C12-14），所述主要溶剂的使用水平低于约40％。其他溶剂可能也存在。其中一些主要溶剂是新化合物和/或新混合物。织物柔软剂活性成分、主要溶剂和可选的其他溶剂的预混物可用于制备完整配方，从而避免/限制加热的需要。
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20150099228A1

  公开（公告）日：2015-04-09

  A resist composition comprises a metal compound obtained from reaction of a starting metal compound having formula (A-1) or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a di- or trihydric alcohol having formula (A-2). M(OR 1A ) 4 (A-1) R 2A (OH) m (A-2) In formula (A-1), M is Ti, Zr or Hf, and R 1A is alkyl. In formula (A-2), m is 2 or 3, R 2A is a divalent group when m=2 or a trivalent group when m=3. The resist composition exhibits improved resolution and edge roughness when processed by the EB or EUV lithography.

  一种抗蚀组合物包括一种金属化合物，所述金属化合物是由具有式(A-1)的起始金属化合物或其（部分）水解物或缩合物或（部分）水解缩合物与具有式(A-2)的二元或三元醇反应得到的。M(OR1A)4(A-1)R2A(OH)m(A-2)在式（A-1）中，M为Ti、Zr或Hf，R1A为烷基。在式（A-2）中，m为2或3，当m=2时，R2A为二价基团，当m=3时，R2A为三价基团。该抗蚀组合物在经过电子束或极紫外光刻时，表现出改善的分辨率和边缘粗糙度。
• Resist composition and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US09274425B2

  公开（公告）日：2016-03-01

  A resist composition comprises a metal compound obtained from reaction of a starting metal compound having formula (A-1) or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a di- or trihydric alcohol having formula (A-2). M(OR1A)4  (A-1) R2A(OH)m  (A-2) In formula (A-1), M is Ti, Zr or Hf, and R1A is alkyl. In formula (A-2), m is 2 or 3, R2A is a divalent group when m=2 or a trivalent group when m=3. The resist composition exhibits improved resolution and edge roughness when processed by the EB or EUV lithography.

  一种抗蚀组合物包括从具有公式（A-1）的起始金属化合物或其（部分）水解物或缩合物或（部分）水解缩合物反应得到的金属化合物，与具有公式（A-2）的二元或三元醇反应得到。M（OR1A）4  （A-1）R2A（OH）m  （A-2）在公式（A-1）中，M为Ti、Zr或Hf，R1A为烷基。在公式（A-2）中，m为2或3，R2A当m=2时为二价基团，当m=3时为三价基团。当通过EB或EUV光刻加工时，该抗蚀组合物表现出改善的分辨率和边缘粗糙度。
• Patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11366386B2

  公开（公告）日：2022-06-21

  A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

  一种图形化方法，包括以下步骤： 1. 形成第一抗蚀膜：使用包含酸发生剂及具有被酸敏感基团保护的羟基和/或羧基的热固性化合物的第一抗蚀材料。 2. 形成第二抗蚀膜：在第一抗蚀膜上使用包含金属化合物(A)和感光剂的第二抗蚀材料。 3. 曝光：利用高能束或电子束照射第一和第二抗蚀膜，进行图形曝光。在此过程中，暴露区域的第一抗蚀膜中的羟基和/或羧基的保护基团被去除，同时金属化合物(A)与脱保护的羟基和/或羧基在该暴露区域形成交联部分。 4. 显影：使用显影剂显影第二抗蚀膜，形成由交联部分构成的金属膜图案。 此方法能够实现更高分辨率和更高灵敏度的薄膜抗蚀图形制备。