Dibenzothiopheno[6,5-<i>b</i>:6′,5′-<i>f</i>]thieno[3,2-<i>b</i>]thiophene (DBTTT): High-Performance Small-Molecule Organic Semiconductor for Field-Effect Transistors
作者:Jeong-Il Park、Jong Won Chung、Joo-Young Kim、Jiyoul Lee、Ji Young Jung、Bonwon Koo、Bang-Lin Lee、Soon W. Lee、Yong Wan Jin、Sang Yoon Lee
DOI:10.1021/jacs.5b01108
日期:2015.9.30
distance is shortened and that the packing density is higher than those of the electronically equivalent benzene analogue, dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). The highest hole mobility we obtained in polycrystalline DBTTT thin-film transistors was 19.3 cm(2)·V(-1)·s(-1), six times higher than that of DNTT-based transistors. The observed isotropic angular mobilities and thermal stabilities
我们介绍了富含噻吩的杂并苯,二苯并噻吩 [6,5-b:6',5'-f] 噻吩并 [3,2-b] 噻吩 (DBTTT) 的合成、表征和结构分析及其应用在场效应晶体管中。DBTTT 的设计基于通过强 SS 相互作用增强分子间电荷转移。晶体结构分析表明,分子间π-π距离缩短,堆积密度高于电子等效苯类似物,二萘并-[2,3-b:2',3'-f]噻吩并[3, 2-b]噻吩 (DNTT)。我们在多晶 DBTTT 薄膜晶体管中获得的最高空穴迁移率为 19.3 cm(2)·V(-1)·s(-1),是基于 DNTT 的晶体管的六倍。