申请人:Daikin Industries, Ltd.
公开号:EP2999018A1
公开(公告)日:2016-03-23
The object of the present invention is to provide a material having excellent performance as an n-type semiconductor material, in particular an n-type semiconductor for photoelectric conversion elements such as organic thin-film solar cells.
The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more as defined below, the fullerene derivative being represented by formula (1):
wherein ring A represents C60 fullerene;
R1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; and
Ar represents aryl optionally substituted with at least one alkyl group,
the purity being defined by the following equation: Purity%=100−Dmax%
wherein the Dmax (%) is the maximum value among the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of carbon, the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of hydrogen, and the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of nitrogen.
本发明的目的是提供一种性能优异的 n 型半导体材料,特别是用于有机薄膜太阳能电池等光电转换元件的 n 型半导体材料。
本发明提供了一种 n 型半导体,它由纯度为 99% 或更高的富勒烯衍生物组成,其定义如下,富勒烯衍生物由式 (1) 表示:
其中环 A 代表 C60 富勒烯;
R1 代表氢原子、任选具有至少一个取代基的烷基或任选具有至少一个取代基的芳基;以及
Ar 代表芳基,可任选被至少一个烷基取代、
纯度用下式定义:纯度%=100-最大值
其中,Dmax(%)是碳元素分析中分析值与理论值之差的绝对值、氢元素分析中分析值与理论值之差的绝对值以及氮元素分析中分析值与理论值之差的绝对值中的最大值。