Synthesis and characterization of organotin(IV) semiconductors and their applications in optoelectronics
作者:César R. Monzón-González、María Elena Sánchez-Vergara、Wilmer E. Vallejo Narváez、Tomás Rocha-Rinza、Marcos Hernández、Elizabeth Gómez、Omar Jiménez-Sandoval、Cecilio Álvarez-Toledano
DOI:10.1016/j.jpcs.2020.109840
日期:2021.3
(LUMO), as well as their UV/Vis spectra, have been characterized. In order to study the electronic behavior of the organotin(IV) semiconductors, hetero-junction devices have been manufactured by a vacuum deposition process. Organic devices of the type glass/ITO/organotin(IV) complex/ZnPc/bathocuproine/Ag have been assembled by sequential sublimatory deposition. The devices have been characterized by
摘要 合成并表征了一系列源自芳基羟亚甲基茚满酮的新型有机锡 (IV) 半导体。这些产品已在电子设备制造中作为空穴注入层 (HIL) 进行检查。它们的结构已经通过密度泛函理论 (DFT) 进行了优化,并且已经表征了最高占据分子轨道 (HOMO) 和最低未占据分子轨道 (LUMO) 的能量值,以及它们的紫外/可见光谱。为了研究有机锡 (IV) 半导体的电子行为,已经通过真空沉积工艺制造了异质结器件。玻璃/ITO/有机锡 (IV) 复合物/ZnPc/浴铜灵/Ag 类型的有机器件已通过连续升华沉积组装。这些器件已通过 X 射线衍射 (XRD) 表征,这表明它们的组成薄膜具有相当程度的结晶度和明确的生长模式。已经测量了器件中半导体的光学带隙,以确定它们的电 I(V) 特性,从而确定它们作为 HIL 的行为。UV/Vis 分析表明,沉积过程可生成不含杂质的平坦异质结结构,这些结构对可见光辐射透明,光学带隙介于