申请人:Konemann Martin
公开号:US20070259475A1
公开(公告)日:2007-11-08
A method for producing an organic field-effect transistor, comprising the steps of:
a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and
b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located,
wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I
wherein
R
1
, R
2
, R
3
and R
4
are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen,
Y
1
is O or NR
a
, wherein R
a
is hydrogen or an organyl residue,
Y
2
is O or NR
b
, wherein R
b
is hydrogen or an organyl residue,
Z
1
, Z
2
, Z
3
and Z
4
are O,
where, in the case that Y
1
is NR
a
, one of the residues Z
1
and Z
2
may be a NR
c
group, where R
a
and R
c
together are a bridging group having 2 to 5 atoms between the terminal bonds,
where, in the case that Y
2
is NR
b
, one of the residues Z
3
and Z
4
may be a NR
d
group, where R
b
and R
d
together are a bridging group having 2 to 5 atoms between the terminal bonds.