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3,4-dihexyloxythiophene-2,5-dicarbaldehyde | 211235-84-6

中文名称
——
中文别名
——
英文名称
3,4-dihexyloxythiophene-2,5-dicarbaldehyde
英文别名
3,4-Dihexoxythiophene-2,5-dicarbaldehyde
3,4-dihexyloxythiophene-2,5-dicarbaldehyde化学式
CAS
211235-84-6
化学式
C18H28O4S
mdl
——
分子量
340.484
InChiKey
KIAGDLVNFCDGKA-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.8
  • 重原子数:
    23
  • 可旋转键数:
    14
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.67
  • 拓扑面积:
    80.8
  • 氢给体数:
    0
  • 氢受体数:
    5

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    2-(Triphenyl-λ5-phosphanylidene)-[1,3]dithiole-4,5-dicarboxylic acid dimethyl ester3,4-dihexyloxythiophene-2,5-dicarbaldehyde 以90%的产率得到2,5-bis<4,5-bis(methoxycarbonyl)-2H-1,3-dithiol-2-ylidenemethyl>-3,4-dihexyloxythiophene
    参考文献:
    名称:
    Low Oxidation Potential Tetrathiafulvalene Analogues Based on 3,4-Dialkoxythiophene π-Conjugating Spacers
    摘要:
    Tetrathiafulvalene analogues involving dihexyloxythiophene (1), ethylenedioxythiophene (2), and bis(3,4-dihexyloxy-2-thienyl)ethylene (3) as conjugating spacer and diversely substituted at the 1,3-dithiole ring (R) have been synthesized. Electronic absorption spectra show the expected decrease of HOMO-LUMO gap when increasing the electron-releasing power of R or the length of the conjugating spacer. Cyclic voltammetry (CV) shows that whereas compounds 1 and 2 are reversibly oxidized into their cation radical and dication through two one-electron steps, for compounds 3 the dication is formed directly via a two-electron transfer. Comparison of the data for compounds 2 and 3 with those of their respective analogues based on thiophene and dithienylethylene shows that introduction of the electron-donating alkoxy groups at the 3 and 4 positions of the thiophene ring produces a 150-200 mV negative shift of the first redox potential (E degrees(1)). On the other hand, CV data for compounds 1 and 2 reveal several unusual features such as E degrees(1) approximate to 0.10 V/SCE ranking among-the lowest known to date and a Coulombic repulsion between positive charges in the dication larger than for the analogue ct-donors based on unsubstituted thiophene. These results are interpreted by a major reorganization of the electronic distribution in the donor molecule due to alkoxy groups: the highest electron density moving from the 1,3-dithiole moiety toward the central thiophene ring.
    DOI:
    10.1021/jo981312b
  • 作为产物:
    参考文献:
    名称:
    Low Oxidation Potential Tetrathiafulvalene Analogues Based on 3,4-Dialkoxythiophene π-Conjugating Spacers
    摘要:
    Tetrathiafulvalene analogues involving dihexyloxythiophene (1), ethylenedioxythiophene (2), and bis(3,4-dihexyloxy-2-thienyl)ethylene (3) as conjugating spacer and diversely substituted at the 1,3-dithiole ring (R) have been synthesized. Electronic absorption spectra show the expected decrease of HOMO-LUMO gap when increasing the electron-releasing power of R or the length of the conjugating spacer. Cyclic voltammetry (CV) shows that whereas compounds 1 and 2 are reversibly oxidized into their cation radical and dication through two one-electron steps, for compounds 3 the dication is formed directly via a two-electron transfer. Comparison of the data for compounds 2 and 3 with those of their respective analogues based on thiophene and dithienylethylene shows that introduction of the electron-donating alkoxy groups at the 3 and 4 positions of the thiophene ring produces a 150-200 mV negative shift of the first redox potential (E degrees(1)). On the other hand, CV data for compounds 1 and 2 reveal several unusual features such as E degrees(1) approximate to 0.10 V/SCE ranking among-the lowest known to date and a Coulombic repulsion between positive charges in the dication larger than for the analogue ct-donors based on unsubstituted thiophene. These results are interpreted by a major reorganization of the electronic distribution in the donor molecule due to alkoxy groups: the highest electron density moving from the 1,3-dithiole moiety toward the central thiophene ring.
    DOI:
    10.1021/jo981312b
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文献信息

  • Nouveaux systèmes conjugués à états redox multiples
    作者:J.-M. Raimundo、S. Akoudad、H. Brisset、J. Roncali
    DOI:10.1051/jcp:1998254
    日期:1998.6
    De nouveaux systèmes conjugués linéaires basés sur l'association de donneurs thiophéniques et du tétracyanoindane préparé à partir de l'indan-1,3-dione ont été synthétisés. Les données optiques et électrochimiques révèlent un fort pouvoir accepteur d'électrons ainsi qu'un faible écart HOMO-LUMO.
    我们合成了新的线性共轭体系,该体系基于噻吩给体与由茚满-1,3-二制备的四茚满的结合。光学和电化学数据显示,该系统具有较高的电子受体容量和较低的 HOMO-LUMO 间隙。
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