Flat Resistivity in θ-Phase Charge-Transfer Salts of Selenium-Containing TMET-TTP Derivatives
作者:Yoshimasa Bando、Minoru Ashizawa、Tadashi Kawamoto、Takehiko Mori
DOI:10.1246/bcsj.81.947
日期:2008.8.15
Two new tetrathiapentalene (TTP)-based donor molecules have been synthesized, in which two of the four sulfur atoms of the inner TTP-skeleton of TMET-TTP (2-[4,5-bis(methylthio)-1,3-dithiol-2-ylidene]-5-(4,5-ethylenedithio-1,3-dithiol-2-ylidene)-1,3,4,6-tetrathiapentalene) are replaced by Se atoms. Four charge-transfer salts of these donors realize θ-type structures. One of the salts shows almost temperature-independent resistivity over a wide temperature range from 50 to 200 K. The calculated highest occupied molecular orbital (HOMO) is more populated on the non-Se-substituted side. This distribution is associated with the temperature-independent resistivity.
我们合成了两种新的基于四硫杂戊烯(TTP)的供体分子,其中 TMET-TTP (2-[4,5-双(甲硫基)-1,3-二硫醇-2-亚基]-5-(4,5-亚乙二硫基-1,3-二硫醇-2-亚基)-1,3,4,6-四硫杂戊烯)内部 TTP 骨架的四个硫原子中的两个被 Se 原子取代。这些供体的四种电荷转移盐实现了 θ 型结构。其中一种盐在 50 至 200 K 的宽温度范围内显示出几乎与温度无关的电阻率。计算得出的最高占位分子轨道(HOMO)在非硒取代的一侧更多。这种分布与与温度无关的电阻率有关。