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二乙基氯化镓 | 30914-08-0

中文名称
二乙基氯化镓
中文别名
——
英文名称
diethylgallium chloride
英文别名
chloro(diethyl)gallane
二乙基氯化镓化学式
CAS
30914-08-0
化学式
C4H10ClGa
mdl
——
分子量
163.299
InChiKey
NVPKNAWBPMTMLA-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    60-62°C
  • 密度:
    1,135 g/cm3

计算性质

  • 辛醇/水分配系数(LogP):
    2.26
  • 重原子数:
    6
  • 可旋转键数:
    2
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

安全信息

  • TSCA:
    No
  • 安全说明:
    S16,S26,S43
  • 危险类别码:
    R14,R34,R11
  • 海关编码:
    2903199000
  • 危险品运输编号:
    UN 3399

SDS

SDS:919be64c356824c43631317aae206150
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反应信息

  • 作为反应物:
    描述:
    2,2,6,6-四甲基哌啶二乙基氯化镓 在 n-butyllithium 作用下, 以 正己烷 为溶剂, 以17%的产率得到diethyl(2,2,6,6-tetramethylpiperidino)gallium
    参考文献:
    名称:
    Linti, Gerald; Frey, Ronald; Polborn, Kurt, Chemische Berichte, 1994, vol. 127, # 8, p. 1387 - 1394
    摘要:
    DOI:
  • 作为产物:
    描述:
    triethylgallium diethyl ether adduct 在 HCl 、 H2O 作用下, 以 为溶剂, 生成 二乙基氯化镓
    参考文献:
    名称:
    GALLIUM TRIETHYL MONOETHERATE, GALLIUM TRIETHYL, GALLIUM TRIETHYL AMMINE1
    摘要:
    DOI:
    10.1021/ja01340a024
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文献信息

  • Darstellung und struktur monomerer N-borylierter Galliumamide
    作者:Gerald Linti
    DOI:10.1016/0022-328x(94)87039-x
    日期:1994.2
    The reaction of N-lithiated aminoboranes of type R2BN(tBu)Li (R  Me, Mes) with Diorganylgallium chlorides R′2GaCl(R′  Me, Et, CH2C(Ph)Me2) yields the N-borylated gallium amides R′2GaN(tBu)BR2. A single crystal X ray structure determination did show the molecule Mes2BN(tBu)GaEt2 to be monomeric with trigonal planar coordinated gallium, nitrogen and boron atoms. The BN bond length is short (1.384(6)
    R型的N-锂化氨基硼烷的反应2 BN(吨丁基)栗(RMe中,MES)与Diorganylgallium氯化物R' 2的GaCl(R'ME等,CH 2 C(PH)我2),得到的N- borylated镓酰胺R' 2的GaN(吨丁基)BR 2。单晶X射线结构测定的确显示了分子Mes 2 BN(t Bu)GaEt 2是具有三角形平面配位的镓,氮和硼原子的单体。BN键的长度很短(1.384(6)Å),而GaN的键长度却很长(1.937(3)Å),尽管氮是不桥接的。所述化合物是单体镓单酰胺的第一个特征充分的实例,另一方面,它们代表了一类新型化合物,该化合物具有结合在一个氮原子上的III主族的两个不同元素。
  • Synthesis and Characterization of Monomeric Organogallium−Nitrogen Compounds, Et<sub>2</sub>GaNMe[C<sub>6</sub>H<sub>2</sub>(2,4,6-t-Bu)<sub>3</sub>], Me<sub>2</sub>GaNMe[C<sub>6</sub>H<sub>2</sub>(2,4,6-t-Bu)<sub>3</sub>], MeGa{NH[C<sub>6</sub>H<sub>2</sub>(2,4,6-t-Bu)<sub>3</sub>]}<sub>2</sub>, and Ga{NH[C<sub>6</sub>H<sub>2</sub>(2,4,6-t-Bu)<sub>3</sub>]}<sub>3</sub>
    作者:O. T. Beachley,、Daniel B. Rosenblum、David J. MacRae
    DOI:10.1021/om001050f
    日期:2001.3.1
    Four gallium−nitrogen compounds, Et2GaNMe[C6H2(2,4,6-t-Bu)3], Me2GaNMe[C6H2(2,4,6-t-Bu)3], MeGaNH[C6H2(2,4,6-t-Bu)3]}2, and Ga[N(H)C6H2(t-2,4,6-Bu)3]3, have been prepared by metathetical reactions. The monomeric derivatives Et2GaNMe[C6H2(2,4,6-t-Bu)3] and Me2GaNMe[C6H2(2,4,6-t-Bu)3] are of interest because their 1H NMR spectra at room temperature had resonances indicative of two magnetically nonequivalent
    四种镓-氮化合物,Et 2 GaNMe [C 6 H 2(2,4,6-t-Bu)3 ],Me 2 GaNMe [C 6 H 2(2,4,6-t-Bu)3 ], MeGa NH [C 6 H 2(2,4,6-t-Bu)3 ]} 2和Ga [N(H)C 6 H 2(t-2,4,6-Bu)3 ] 3,已经通过易位反应制备了。单体衍生物Et 2 GaNMe [C 6 H 2(2,4,6-t-Bu)3 ]和Me 2 GaNMe [C 6 H2(2,4,6-t-Bu)3 ]是令人感兴趣的,因为它们在室温下的1 H NMR光谱具有表明与镓结合的两个磁性不等价有机基团的共振,该光谱特征与围绕镓的旋转受限制相一致氮键。Me 2 GaNMe [C 6 H 2(2,4,6-t-Bu)3 ]的甲苯溶液的可变温度1 H NMR光谱研究确定,绕镓-氮键旋转的障碍约为71 kJ /摩尔 该结果表明空间效应可能是造成这种情况的原因。单体化合物MeGa
  • Transition Metal Coordinated Al(X)L<sub>2</sub> and Ga(X)L<sub>2</sub> Fragments
    作者:Roland A. Fischer、Markus M. Schulte、Jurij Weiss、Laszlo Zsolnai、Albrecht Jacobi、Gottfried Huttner、Gernot Frenking、Christian Boehme、Sergei F. Vyboishchikov
    DOI:10.1021/ja9716463
    日期:1998.2.1
    neutral intermetallic systems (CO)nM−Ga[X(L)2] (M = Cr, Mo, W, Fe; n = 4, 5; X = Cl, Me, Et; L2 = tmeda, dme, bipy, tBu-dab, thf2) (1−14) and (CO)5M-Al[X(L)2] (M = Cr, Mo, W; X = Cl, Et, iBu; L2 = tmeda, tmpda) (15−20, 23, 24). The chloro derivatives can be converted to the corresponding hydrido or tetrahydridoboranato species which is exemplarily shown by compounds 21 and 22. In the case of R2GaCl
    金属羰基二价阴离子在 thf 中与第 13 族氯化物 XmECl3-m(E = Al、Ga;X = Cl、Me、Et、iBu;m = 0、1)反应生成单阴离子物质 [(CO)nM-EXmCl2-m ]- (M = Fe, Cr, Mo, W; n = 4, 5) 作为主要产物,在与非配位阳离子交换后可以作为无溶剂盐分离。在加入螯合路易斯碱(例如 tmeda、dme 和溶剂与二氯甲烷交换后,初级产物进行第二次盐消除反应,产生中性金属间系统 (CO)nM-Ga[X(L)2] (M = Cr, Mo, W, Fe; n = 4, 5; X = Cl, Me, Et; L2 = tmeda, dme, bipy, tBu-dab, thf2) (1−14) 和 (CO)5M-Al[X (L)2] (M = Cr, Mo, W; X = Cl, Et, iBu; L2 = tmeda, tmpda)
  • [EN] PROCESS FOR PREPARING TRIALKYLGALLIUM COMPOUNDS<br/>[FR] PROCÉDÉ POUR LA PRÉPARATION DE COMPOSÉS DE TYPE TRIALKYLGALLIUM
    申请人:UMICORE AG & CO KG
    公开号:WO2013083450A1
    公开(公告)日:2013-06-13
    The invention relates to a process for preparing trialkylgallium compounds of the general formula R3Ga. The process is based on the reaction of gallium trichloride (GaCh), optionally in a mixture with partially alkylated products, with an alkylaluminium compound of the type RaAICIb (where R = C1-C5-alkyl, a = 1, 2 or 3, b = 0, 1 or 2 and a + b = 3) in the presence of at least two alkali metal halides (e.g. NaCI and KCI) as auxiliary base. Preference is given to using alkylaluminium sesquichloride (R3AI2CI3) or trialkylaluminium (R3AI). The reaction mixture is heated to a temperature in the range from 120°C to 250°C and the trialkylgallium compound formed is separated off via a separator which is operated at a temperature which is more than 30°C below the boiling point of the most volatile partially alkylated product. Complete alkylation is achieved here and partially alkylated products are recirculated to the reaction mixture. In a further step, the reaction mixture can be heated to a maximum of 350°C and the remaining fully alkylated and partially alkylated products can be separated off. The process provides a high yield of trialkylgallium compound and displays high gallium utilization; the products are used, e.g., as precursors for MOCVD processes.
    该发明涉及一种制备一般式为R3Ga的三烷基镓化合物的过程。该过程基于氯化镓(GaCl3)与一种类型为RaAlClb(其中R = C1-C5-烷基,a = 1、2或3,b = 0、1或2,a + b = 3)的烷基铝化合物反应,可选地与部分烷基化产物混合,同时在至少两种碱金属卤化物(例如NaCl和KCl)的辅助碱存在下进行。优选使用烷基铝酮三氯化物(R3Al2Cl3)或三烷基铝(R3Al)。将反应混合物加热至120°C至250°C的温度范围,并通过在沸点最易挥发的部分烷基化产物的沸点以下30°C以上的温度下操作的分离器将生成的三烷基镓化合物分离出来。在这里实现了完全烷基化,部分烷基化产物被重新循环到反应混合物中。在进一步的步骤中,反应混合物可以加热至最高350°C,并且可以分离出剩余的完全烷基化和部分烷基化产物。该过程提供了高产率的三烷基镓化合物,并显示出高镓利用率;这些产物可用作MOCVD过程的前体。
  • [EN] PROCESS FOR PREPARING TRIALKYL COMPOUNDS OF METALS OF GROUP IIIA<br/>[FR] PROCÉDÉ POUR LA PRÉPARATION DE COMPOSÉS TRIALKYLIQUES DE MÉTAUX DU GROUPE IIIA
    申请人:UMICORE AG & CO KG
    公开号:WO2013083449A1
    公开(公告)日:2013-06-13
    The invention relates to a process for preparing trialkylmetal compounds of the general formula R3M (where M = metal of group llIA of the Periodic Table of the Elements (PTE), preferably gallium or indium, and R = C1-C5-alkyl, preferably methyl or ethyl). The process is based on the reaction of metal trichloride (MeCl3) with alkylaluminium sesquichloride (R3AI2CI3) in the presence of at least one alkali metal halide as auxiliary base. The reaction mixture is heated to a temperature above 120°C and the trialkylmetal compound is separated off from the reaction mixture via a separator, with partially alkylated products being at the same time recirculated to the reaction mixture. In a further step, the reaction mixture is heated to a maximum of 350°C and the remaining alkylated and partially alkylated products are separated off. The products obtained in this way can optionally be recycled in the process. The process displays a high yield of trialkylmetal compound and also a high metal utilization; the products are used as precursors for MOCVD processes.
    该发明涉及一种制备三烷基金属化合物的方法,其通式为R3M(其中M为元素周期表(PTE)中IIIA族金属,优选为镓或铟,R为C1-C5烷基,优选为甲基或乙基)。该方法基于金属三氯化物(MeCl3)与烷基铝三氯化物(R3AI2CI3)在至少一种碱金属卤化物辅助碱的存在下反应。反应混合物加热至120°C以上的温度,通过分离器从反应混合物中分离出三烷基金属化合物,同时部分烷基化产物同时回流到反应混合物中。在进一步的步骤中,将反应混合物加热至最高350°C,并分离出剩余的烷基化和部分烷基化产物。以这种方式获得的产品可以选择性地在过程中回收利用。该方法显示出高产率的三烷基金属化合物和高金属利用率;这些产品被用作金属有机化学气相沉积(MOCVD)过程的前体。
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