Palladium-Catalyzed Desulfitative Mizoroki-Heck Couplings of Sulfonyl Chlorides with Mono- and Disubstituted Olefins: Rhodium-Catalyzed Desulfitative Heck-Type Reactions under Phosphine- and Base-Free Conditions
作者:Srinivas Reddy Dubbaka、Pierre Vogel
DOI:10.1002/chem.200400838
日期:2005.4.22
olefins with arenesulfonyl and trifluoromethanesulfonyl chlorides. Thus (E)-1,2-disubstituted alkenes with high stereoselectivity and 1,1,2-disubstituted alkenes with 12:1 to 21:1 E/Z steroselectivity can be obtained. Herrmann's palladacycle at 0.1 mol % is sufficient to catalyze these reactions, for which electron-rich or electron-poor sulfonylchlorides and alkenes are suitable. If phosphine- and base-free
Maghemite decorated with ultra-small palladium nanoparticles (γ-Fe<sub>2</sub>O<sub>3</sub>–Pd): applications in the Heck–Mizoroki olefination, Suzuki reaction and allylic oxidation of alkenes
作者:Anuj K. Rathi、Manoj B. Gawande、Jiri Pechousek、Jiri Tucek、Claudia Aparicio、Martin Petr、Ondrej Tomanec、Radka Krikavova、Zdenek Travnicek、Rajender S. Varma、Radek Zboril
DOI:10.1039/c5gc02264a
日期:——
γ-Fe2O3–Pd NPs for Heck, Suzuki and allylic oxidation reaction under milder conditions.
γ-Fe2O3-Pd纳米颗粒用于在更温和的条件下进行Heck,Suzuki和烯丙基氧化反应。
N-Phenylurea as an inexpensive and efficient ligand for Pd-catalyzed Heck and room-temperature Suzuki reactions
N-Phenylurea was found to constitute a highly efficient, yet low-priced, phosphine-free ligand for the Pd-catalyzedHeck and room-temperature Suzukireactions of aryl bromides and iodides with very high turnover numbers (ca. 103–104).
phosphine-free ligand than the previously reported ligand, N,N-dimethylglycine, in the Pd-catalyzed Heckreaction for a variety of aryl bromides, aryl iodides, and activated aryl chlorides with a practical turnover number of 10(3). Both kinetic and theoretical studies suggested that N,N-dimethyl-beta-alanine led to faster oxidative addition of an aryl halide to Pd than N,N-dimethylglycine. [reaction: see text]
Sintered Silicon Carbide: A New Ceramic Vessel Material for Microwave Chemistry in Single-Mode Reactors
作者:Bernhard Gutmann、David Obermayer、Benedikt Reichart、Bojana Prekodravac、Muhammad Irfan、Jennifer M. Kremsner、C. Oliver Kappe
DOI:10.1002/chem.201001703
日期:2010.10.25
Siliconcarbide (SiC) is a strongly microwave absorbing chemically inert ceramic material that can be utilized at extremely high temperatures due to its high melting point and very low thermal expansion coefficient. Microwave irradiation induces a flow of electrons in the semiconductingceramic that heats the material very efficiently through resistance heating mechanisms. The use of SiC carbide reaction