1-(1-甲氧基-乙氧基)-戊烷 | 73142-32-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 1-(1-甲氧基-乙氧基)-戊烷
• 英文名称: 1-(1-methoxy-ethoxy)-pentane
• 英文别名: 1-Methoxy-1-pentyloxyethane；1-(1-methoxyethoxy)pentane
• CAS: 73142-32-2
• 化学式: C₈H₁₈O₂
• 分子量: 146.23
• InChiKey: DSXZWFNXPOIWEO-UHFFFAOYSA-N

物化性质

• 沸点：
  156.4±8.0 °C(Predicted)
• 密度：
  0.841±0.06 g/cm3(Predicted)
• LogP：
  2.208 (est)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  10
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  二甲氧基乙烷 、 乙烯 在 二叔丁基过氧化物 作用下， 生成 1-(1-甲氧基-乙氧基)-戊烷
  参考文献：
  名称：

  Telomerization of ethylene with dimethylacetal

  摘要：

  DOI：

  10.1007/bf00951705

文献信息

• Safiev, O. G.; Zorin, V. V.; Imashev, U. B., Journal of Organic Chemistry USSR (English Translation), 1980, vol. 16, # 7, p. 1192 - 1195
  作者：Safiev, O. G.、Zorin, V. V.、Imashev, U. B.、Zlotskii, S. S.、Terent'ev, A. B.、Rakhmankulov, D. L.

  DOI：——

  日期：——
• TERENTEV A. B.; SAFIEV O. G.; IMASHEV U. B., IZV. AN CCCP. CEP. XIM., 1980, HO 11, 2643-2645
  作者：TERENTEV A. B.、 SAFIEV O. G.、 IMASHEV U. B.

  DOI：——

  日期：——
• PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
  申请人：FUJIFILM Corporation

  公开号：US20130202999A1

  公开（公告）日：2013-08-08

  Provided is a negative type pattern forming method that satisfies high sensitivity, high resolution, good roughness and good dry etching resistance at the same time, and further, has a good development time dependency, the method including (i) forming a film by a chemical amplification resist composition containing (A) a fullerene derivative having an acid-decomposable group, (B) a compound generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) exposing the film, and (iii) developing the exposed film by using an organic solvent-containing developer.
• METHOD FOR CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150221500A1

  公开（公告）日：2015-08-06

  The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.
• US8956802B2
  申请人：——

  公开号：US8956802B2

  公开（公告）日：2015-02-17