The invention relates to mixtures having:
components (a) having at least one fragrance of the formula (I)
where
R1=OC-R2, CH
2
OR3, C1-C8 open-chain or branched aliphatic radical, optionally substituted and/or unsaturated,
with R2=an open-chain or branched aliphatic radical, optionally substituted and/or unsaturated, having 2-10 C atoms,
with R3=an open-chain or branched aliphatic radical, optionally substituted and/or unsaturated, having 1-8 C atoms, and
components (b) having at least one fragrance, different from the fragrances of component a,
characterized in that the weight ratio of all components (a) to all components (b) is from 1:10 to 1:10000.
Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method
申请人:Mori Kazunori
公开号:US20120077126A1
公开(公告)日:2012-03-29
A fluorine-containing polymer of the present invention contains a repeating unit (a) of the general formula (2) and has a mass-average molecular weight of 1,000 to 1,000,000. This polymer is suitably used in a resist composition for pattern formation by high energy ray radiation of 300 nm or less wavelength or electron beam radiation or a top coat composition for liquid immersion lithography and is characterized as having high water repellency, notably high receding contact angle.
In the formula, R
1
represents a polymerizable double bond-containing group; R
2
represents a fluorine atom or a fluorine-containing alkyl group; R
8
represents a substituted or unsubstituted alkyl group or the like; and W
1
represents a single bond, a substituted or unsubstituted methylene group or the like.
POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
申请人:Masunaga Keiichi
公开号:US20110212391A1
公开(公告)日:2011-09-01
A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.
CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
申请人:Masunaga Keiichi
公开号:US20110212390A1
公开(公告)日:2011-09-01
A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.