Efficient Inverted Bulk Heterojunction Photovoltaic Devices Using a Transparent Polymeric Interfacial Buffer Layer with C<SUB>60</SUB> Pendant and UV Curable Groups
作者:Younghwan Shin、Seonju Jeong、Hyeok Yong Kwon、Yoon Soo Han、Younghwan Kwon
DOI:10.1166/jnn.2012.5900
日期:2012.5.1
We demonstrate the synthesis of a transparent, polymeric n-type material (M1) consisting of C60 pendant and UV curable groups in side chains. This material (M1) is employed as a polymeric n-type interfacial buffer layer for an efficient inverted bulk heterojunction (BHJ) photovoltaic device based on regioregular poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PC61BM) active layer. Under simulated solar illumination of AM 1.5G (100 mW/cm2), the highest efficient devices fabricated with a configuration of ITO/interfacial buffer layer (M1, 10 nm)/P3HT:PC61BM (1:0.9 w:w) (120 nm)/PEDOT:PSS (30 nm)/Ag (100 nm) achieve an average power conversion efficiency PCE of 2.16%, with short-circuit current J sc = 6.70 mA/cm2, fill factor FF = 54.2%, and open-circuit voltage V Oc = 0.60 V. This result is comparable to the inverted BHJ photovoltaic devices fabricated with Cs2CO3, one of widely used as a buffer layer. The synthesized M1 have thus proven to be promising polymeric interfacial buffer layer for high efficient BHJ photovoltaic devices.
我们展示了一种透明的高分子 n 型材料(M1)的合成过程,这种材料由 C60 垂体和侧链中的紫外线固化基团组成。这种材料(M1)被用作高分子 n 型界面缓冲层,用于基于多规聚(3-己基噻吩):[6,6]-苯基 C61 丁酸甲酯(P3HT:PC61BM)活性层的高效反向体异质结(BHJ)光伏器件。在 AM 1.5G(100 mW/cm2)的模拟太阳光照射下,采用 ITO/界面缓冲层(M1,10 nm)/P3HT:PC61BM(1:0.9 w:w) (120 nm)/PEDOT:PSS (30 nm)/Ag (100 nm)配置制成的最高效率器件的平均功率转换效率 PCE 为 2.16%,短路电流 J sc = 6.70 mA/cm2,填充因子 FF = 54.2%,开路电压 V Oc = 0.60 V。这一结果与使用 Cs2CO3(广泛用作缓冲层之一)制造的反相 BHJ 光伏器件相当。因此,合成的 M1 被证明是用于高效 BHJ 光伏器件的理想聚合物界面缓冲层。