A study on the development of CVD precursors V – syntheses and characterization of new N-alkoxy-β-ketoiminate complexes of titanium
作者:Sunkwon Lim、Bohyun Choi、Yo-sep Min、Daesig Kim、Il Yoon、Shim Sung Lee、Ik-Mo Lee
DOI:10.1016/j.jorganchem.2003.10.008
日期:2004.1
The synthesis and characterization of various new titanium N-alkoxy-beta-ketoiminate complexes are reported. Reactions between N-alkoxy-beta-ketoimine ligands and Ti(O-iPr)4 resulted in dimeric [Ti(O-iPr)(2)(N-alkoxy-beta-ketoiminate)](2) complexes or monomeric [Ti(N-alkoxy-beta-ketoiniinate)(2)] ones depending on the amount of ligands. Terdentate N-alkoxy-beta-ketoiminate ligands do not prevent dimer complexes from undergoing disproportional rearrangement to produce Ti(O-iPr)(4) and [Ti(N-alkoxy-beta-ketoiminate)(2)]. The mechanism of this behavior is too complicated but it may include the dissociation and recoordination of ligands. Crystal structures of [Ti(N-alkoxy-beta-ketoiminate)(2)] (MeC(O)CHC(Me)NC(Et)CH2O (3f) and t-BuC(O)CHC(Me)NCH2CH(Me)O (3k)) show that these are distorted octahedron and beta-ketoiminate ligands appear to coordinate as a beta-imino enolate. Two terdentate beta-ketoiminate ligands coordinate meridionally and they are perpendicular to each other. Thermal characteristics of monomeric and dimeric titanium complexes were determined by TGA and DSC and these are reasonably volatile as potential precursors of TiO2 thin films. (C) 2003 Elsevier B.V. All rights reserved.
Novel group IV metal precursors and chemical vapor deposition method using thereof
申请人:SAMSUNG ELECTRONICS CO., LTD.
公开号:EP1184365A3
公开(公告)日:2003-08-06
Disclosed herein is an organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of -2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1~8 alkyl group; and R3 is a linear or branched C1~8 alkylene group. Also, there is disclosed a chemical vapor deposition method which comprises forming a metal oxide thin film on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability. The precursor is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.