A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).
一种图案形成方法包括将一种
化学放大型光刻胶材料制成的感光
树脂组成物的预定区域图案暴露于第一种放射性射线中,该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪
水式暴露于第二种放射性射线中,该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该
化学放大型光刻胶材料包括
基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。