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3,4-Diethyl-dihydro-furan-2-one | 90370-85-7

中文名称
——
中文别名
——
英文名称
3,4-Diethyl-dihydro-furan-2-one
英文别名
3,4-Diethyloxolan-2-one
3,4-Diethyl-dihydro-furan-2-one化学式
CAS
90370-85-7
化学式
C8H14O2
mdl
——
分子量
142.198
InChiKey
SLPJGNMZYBXRDL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.9
  • 重原子数:
    10
  • 可旋转键数:
    2
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.88
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

反应信息

点击查看最新优质反应信息

文献信息

  • CHEMICAL LIQUID, CHEMICAL LIQUID HOUSING BODY, RESIST PATTERN FORMATION METHOD, AND PRODUCTION METHOD FOR SEMICONDUCTOR CHIPS
    申请人:FUJIFILM Corporation
    公开号:EP3862815A1
    公开(公告)日:2021-08-11
    The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.
    本发明提供了一种化学液体,在将该化学液体用作显影液或漂洗液的情况下,可以在获得抗蚀剂图案的同时抑制图案间隔的变化。本发明还提供了一种化学液体储存体、一种抗蚀剂图案形成方法和一种半导体芯片制造方法。根据本发明的一个实施例,化学液体是含有醋酸正丁酯和醋酸异丁酯的化学液体,其中醋酸正丁酯的含量占化学液体总质量的 99.000% 至 99.999%,醋酸异丁酯的含量占化学液体总质量的 1.0 至 1,000 质量 ppm。
  • BELLETIRE, J. L.;MAHMOODI, N. O., TETRAHEDRON LETT., 30,(1989) N3, C. 4363-4366
    作者:BELLETIRE, J. L.、MAHMOODI, N. O.
    DOI:——
    日期:——
  • RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND
    申请人:JSR CORPORATION
    公开号:US20130189621A1
    公开(公告)日:2013-07-25
    A radiation-sensitive resin composition includes a polymer having a structural unit represented by a formula (I). In the formula (I), R 1 represents a hydrogen atom or a methyl group. X represents a bivalent alicyclic hydrocarbon group not having or having a substituent. Y represents a bivalent hydrocarbon group having 1 to 20 carbon atoms. R 2 represents a methyl group or a trifluoromethyl group.
  • PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM CORPORATION
    公开号:US20150378257A1
    公开(公告)日:2015-12-31
    According to one example of the present application, there is provided a pattern forming method including: (i) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a specific resin and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) exposing the film; and (iii) developing the film exposed, by using an organic solvent-containing developer to form a negative pattern.
  • US7575846B2
    申请人:——
    公开号:US7575846B2
    公开(公告)日:2009-08-18
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