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di(n-propyl)gallium chloride | 55681-97-5

中文名称
——
中文别名
——
英文名称
di(n-propyl)gallium chloride
英文别名
dipropylgallium chloride;Chloro(dipropyl)gallane
di(n-propyl)gallium chloride化学式
CAS
55681-97-5
化学式
C6H14ClGa
mdl
——
分子量
191.353
InChiKey
AQXDPNBKLHZHHT-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.04
  • 重原子数:
    8
  • 可旋转键数:
    4
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

反应信息

  • 作为反应物:
    描述:
    di(n-propyl)gallium chlorideair 作用下, 以 neat (no solvent) 为溶剂, 生成 gallium(III) oxide
    参考文献:
    名称:
    摘要:
    The thermal decomposition of dipropylaluminum, dipropylgallium, and dipropylindium chlorides was investigated by thermal analysis, The growth kinetics of oxide films on silicon and gallium arsenide were studied, using dipropylaluminum, dipropylgallium, and dipropylindium chlorides: propylaluminum and propylgallium dichlorides ethylaluminum dichloride; and diethylaluminum and diethylindium chlorides as metalorganic precursors, The resultant films were characterized by IR and x-ray spectroscopics and electrical measurements.
    DOI:
    10.1023/a:1015454518259
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文献信息

  • The reactions of dialkylgallium hydrides with tert-butylethynylbenzenes—a systematic investigation into the course of hydrogallation reactions
    作者:Werner Uhl、Michael Claesener、Sima Haddadpour、Beate Jasper、Alexander Hepp
    DOI:10.1039/b614003c
    日期:——
    the formation of one-dimensional coordination polymers. In contrast secondary reactions with the release of the corresponding trialkylgallium derivatives GaR(3) (R = Et, nPr, iPr, CH(2)tBu, tBu) were observed for all hydrogallation reactions involving the trisalkyne 1,3,5-tris(tert-butylethynyl)benzene. A similar reaction was observed upon treatment of the 1,4-bisalkyne with a dialkylgallium hydride
    双和三(叔丁基乙炔基)苯与氢化二烷基镓的反应可提供两种不同类型的产物。1,4-二(叔丁基乙炔基)苯和二烷基氢化镓R(2)GaH带有相对较小的取代基(R = Et,nPr)得到预期的加成产物,每个C三键C三键插入Ga-H键。完整的GaR(2)基团连接到苯环的α位上的碳原子上,并且分子间的Ga-C相互作用导致形成一维配位聚合物。相比之下,对于涉及三炔1,3,5-三(所有)的加氢加氢反应,观察到具有相应三烷基镓衍生物GaR(3)(R = Et,nPr,iPr,CH(2)tBu,tBu)释放的二级反应。叔丁基乙炔基)苯。用带有相对大取代基的氢化二烷基镓处理1,4-双炔烃时,观察到类似的反应(R =新戊基)。在所有这些情况下,形成环烷型分子,两个苯环之间的桥连位置带有两个或三个镓原子。
  • Novel intramolecularly stabilized organogallium and organoindium compounds and their use in MOVPE
    作者:Herbert Schumann、Uwe Hartmann、Wilfried Wassermann
    DOI:10.1016/s0277-5387(00)80590-2
    日期:1990.1
  • Schumann, Herbert; Hartmann, Uwe; Wassermann, Wilfried, Chemische Berichte, 1990, vol. 123, p. 2093 - 2100
    作者:Schumann, Herbert、Hartmann, Uwe、Wassermann, Wilfried、Dietrich, Andreas、Goerlitz, Frank H.、et al.
    DOI:——
    日期:——
  • SCHUMANN, HERBERT;HARTMANN, UWE;WASSERMANN, WILFRIED, POLYHEDRON, 9,(1990) N-3, C. 253-360
    作者:SCHUMANN, HERBERT、HARTMANN, UWE、WASSERMANN, WILFRIED
    DOI:——
    日期:——
  • ——
    作者:O. N. Mittov、N. I. Ponomareva、I. Ya. Mittova
    DOI:10.1023/a:1015454518259
    日期:——
    The thermal decomposition of dipropylaluminum, dipropylgallium, and dipropylindium chlorides was investigated by thermal analysis, The growth kinetics of oxide films on silicon and gallium arsenide were studied, using dipropylaluminum, dipropylgallium, and dipropylindium chlorides: propylaluminum and propylgallium dichlorides ethylaluminum dichloride; and diethylaluminum and diethylindium chlorides as metalorganic precursors, The resultant films were characterized by IR and x-ray spectroscopics and electrical measurements.
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