trivinyl ether of 1,1,1-tris(hydroxymethyl) ethane | 135965-88-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: trivinyl ether of 1,1,1-tris(hydroxymethyl) ethane
• 英文别名: 1,3-Bis(ethenoxy)-2-(ethenoxymethyl)-2-methylpropane
• CAS: 135965-88-7
• 化学式: C₁₁H₁₈O₃
• 分子量: 198.262
• InChiKey: PDEUHCGWCOKHBA-UHFFFAOYSA-N

物化性质

• 沸点：
  251.8±35.0 °C(Predicted)
• 密度：
  0.924±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  14
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  27.7
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  trivinyl ether of 1,1,1-tris(hydroxymethyl) ethane 、 bis(2-phenethyl)phosphine 在 偶氮二异丁腈 作用下， 以 苯 为溶剂， 反应 72.0h， 以88%的产率得到1,1,1-tris[2-(diphenethylphosphino)ethoxymethyl]ethane
  参考文献：
  名称：

  三乙烯基醚与二次膦的加氢磷酸化反应合成具有氨基和醚基的三脚架膦

  摘要：

  摘要 通过将仲膦穷尽地添加到氨基三醇的三乙烯基醚中，将一氧化氮与（和）氧原子作为其他较弱的配位位点（新的半不稳定配体）进行一锅，无原子经济，无金属和卤素的合成已开发出三醇。反应在自由基条件下进行（UV辐射或AIBN，反应物摩尔比为3：1），从而以良好或优异的收率为所有三个乙烯基氧基提供化学和区域选择性的反马尔科夫尼科夫三加合物。 通过将仲膦穷尽地添加到氨基三醇的三乙烯基醚中，将一氧化氮与（和）氧原子作为其他较弱的配位位点（新的半不稳定配体）进行一锅，无原子经济，无金属和卤素的合成已开发出三醇。反应在自由基条件下进行（UV辐射或AIBN，反应物摩尔比为3：1），从而以良好或优异的收率为所有三个乙烯基氧基提供化学和区域选择性的反马尔科夫尼科夫三加合物。

  DOI：

  10.1055/s-0033-1340497
• 作为产物：
  描述：

  1,1,1-三(羟甲基)乙烷 、 乙炔 在 二甲基亚砜 、 potassium hydroxide 作用下， 生成 trivinyl ether of 1,1,1-tris(hydroxymethyl) ethane
  参考文献：
  名称：

  Atom-economic synthesis of highly branched functional ‘tripod-like’ triphosphine sulfides

  摘要：

  The tertiary polyfunctional triphosphine sulfides with amino and (or) ether groups have been synthesized in excellent yields by the exhaustive regioselective (in anti-Markovnikov manner) addition of secondary phosphines sulfides to trivinyl ethers of aminotriols and triols under free-radical conditions (UV-irradiation, 1.5-5 h).

  DOI：

  10.1080/17415993.2015.1007143

文献信息

• Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040167322A1

  公开（公告）日：2004-08-26

  A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

  一种化学放大型抗蚀组合物，包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷，具有许多优点，包括提高分辨率，改善焦点宽度，即使在长期PED上也减少线宽变化或形状退化，涂层、显影和剥离后减少残留物，并在显影后改善图案轮廓，因此适用于微加工。
• Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process
  申请人：——

  公开号：US20030180653A1

  公开（公告）日：2003-09-25

  A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of formula (1) wherein R is H or C 1-4 alkyl or alkoxy, G is SO 2 or CO, R 3 is C 1-10 alkyl or C 6-14 aryl, p is 1 or 2, q is 0 or 1, p+q=2, n is 0 or 1, m is 3 to 11, and k is 0 to 4. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution and improved pattern profile after development. 1

  一种化学放大型光刻胶组合物包含一种化学放大型光酸发生剂，其化学式为（1），其中R为H或C1-4烷基或烷氧基，G为SO2或CO，R3为C1-10烷基或C6-14芳基，p为1或2，q为0或1，p+q=2，n为0或1，m为3至11，k为0至4。该组合物适用于微细加工，尤其是通过深紫外光刻技术，因为具有许多优点，包括提高分辨率和在显影后改善图案轮廓。
• Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process
  申请人：——

  公开号：US20040033432A1

  公开（公告）日：2004-02-19

  Sulfonyldiazomethane compounds containing a long-chain alkyl- or alkoxy-naphthyl group are novel and useful as photoacid generators. Chemical amplification type resist compositions comprising the same are suited for microfabrication because of many advantages including improved resolution, improved focus latitude, and minimized line width variation or shape degradation even on long-term PED.

  含有长链烷基或烷氧基萘基的磺酰基二氮甲烷化合物是一种新颖且有用的光酸发生剂。由此组成的化学增强型抗蚀剂配方适用于微细加工，因为具有许多优点，包括提高分辨率、改善焦点宽度、并且即使在长期使用后也能最小化线宽变化或形状退化。
• Sulfonium salt, curable composition, ink composition, inkjet recording method, printed material, process for producing lithographic printing plate, and lithographic printing plate
  申请人：Tsuchimura Tomotaka

  公开号：US20070197677A1

  公开（公告）日：2007-08-23

  A sulfonium salt is provided that has a cation represented by Formula (II) (R 1′ to R 13′ in Formula (II) independently denote a hydrogen atom or a substituent, and may be bonded to each other to form a ring, provided that at least one of R 1′ to R 8′ denotes a halogen atom or a haloalkyl group). There are also provided a curable composition that includes the sulfonium salt, and an ink composition that includes the curabie composition. Furthermore, there are also provided an inkjet recording method employing the ink composition, and a process for producing a lithographic printing plate, the process including discharging the ink composition onto a hydrophilic support. A printed material and a lithographic printing plate thus obtained are also included in the present invention.

  提供一种具有由化学式（II）表示的阳离子的硫铵盐（其中，化学式（II）中的R1'到R13'独立地表示氢原子或取代基，并且它们可以结合在一起形成环，前提是R1'到R8'中至少有一个表示卤素原子或卤代烷基）。还提供了包括该硫铵盐的可固化组合物，以及包括该可固化组合物的油墨组合物。此外，还提供了一种采用该油墨组合物的喷墨记录方法，以及生产平版印刷版的工艺，其中该工艺包括将油墨组合物排放到亲水性支撑体上。本发明还包括由此获得的印刷材料和平版印刷版。
• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。