Bi- and terthiazolyls have been prepared in high yields by cross-coupling of trimethylstannylthiazoles with mono- and dibromothiazoles in the presence of tetrakis(triphenylphosphine)palladium(0).
devices. Here, we report the design, synthesis, and characterization of a new series of thiazole–thiophene tetra- (1 and 2) and hexa-heteroaryl (3 and 4) co-oligomers, varied by core extension and regiochemistry, which are end-functionalized with electron-withdrawing perfluorohexyl substituents. These new semiconductors are found to exhibit excellent n-channel OFET transport with electron mobilities (μe)
尽管它们具有良好的电子和结构特性,但是噻唑基构建基块的合成开发和将其掺入n型半导体中已经落后于其他π缺陷构建基块。由于噻唑在π共轭体系中的插入对合成的要求更高,因此持续不断的研究工作对于强调其在电子传输设备中的性能至关重要。在这里,我们报告了一系列新的噻唑-噻吩四-(1和2)和六-杂芳基(3和4)的设计,合成和表征)共聚低聚物,其随核心延伸和区域化学变化而变化,并用吸电子的全氟己基取代基进行末端官能化。这些新的半导体被发现表现出优异的Ñ声道OFET传输与电子迁移率(μ ë)高达1.30厘米2 /(V·S)(我上/我关> 10 6),用于膜2在室温下沉积。与先前的研究相反,我们在这里表明2,2'-联噻唑可以成为高性能n通道半导体的非常实用的构建基块。另外,将2,2'-和5,5'-联噻唑插入众所周知的六噻吩骨架中在DFH-6T中,观察到3和4的电荷传输显着改善(从0.001–0.021 cm 2
Method for Aerobic Oxidative Coupling of Thiophenes with a Ligand-Supported Palladium Catalyst
申请人:Wisconsin Alumni Research Foundation
公开号:US20190210993A1
公开(公告)日:2019-07-11
An oxidative homocoupling method of synthesizing certain 2,2′-bithiophenes from thiophenes using oxygen as the terminal oxidant is disclosed. In non-limiting examples, the method uses oxygen along with a catalytic system that includes palladium, an assistive ligand, and a non-palladium metal additive to catalyze one of the following reactions:
Associated catalytic systems and compositions are also disclosed.
SEMICONDUCTOR MATERIALS PREPARED FROM BRIDGED BITHIAZOLE COPOLYMERS
申请人:Mishra Ashok Kumar
公开号:US20130144065A1
公开(公告)日:2013-06-06
The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A
1
and A
2
can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.