A new alkylthienyl substituted thieno[2,3-f]benzofuran (TBF)-based polymer (PTBFTDTBT) was synthesized and characterized. PTBFTDTBT had a high molecular weight, good solubility in common organic solvents, broad visible absorption from 300 to 750 nm, and a relatively deep highest occupied molecular orbital level (â5.2 eV). PTBFTDTBT also showed a field hole mobility up to the order of 10â2 using an organic field effect transistor (OFET) method and an order of 10â2 using a space-charge-limited current (SCLC) method. With the structure of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/PTBFTDTBT:PC71BM (1â:â2, w/w)/Ca/Al, a power conversion efficiency of 6.42% was obtained with a high short circuit current (Jsc) of 13.51 mA cmâ2 and fill factor (FF) of 61%, under the illumination of AM1.5G, at 100 mW cmâ2, without any post-treatment. The study demonstrates that TBF is a promising building block for organic electronics.
合成并表征了一种新型烷基
噻吩取代
噻吩并[2,3-f]
苯并呋喃(TBF)基聚合物(PTBFTDTBT)。PTBFTDTBT分子量高,在普通有机溶剂中溶解性好,在300-750 nm波长范围内具有广泛的可见光吸收,并且具有相对较深的最高占据分子轨道电平(§5.2 eV)。利用有机场效应晶体管(OFET)方法和空间电荷限流(SCLC)方法,PTBFTDTBT 的场空穴迁移率也分别达到了 10â2 量级和 10â2 量级。在氧化
铟锡(ITO)/聚(3,4-亚乙二氧基
噻吩):聚
苯乙烯磺酸盐/PTBFTDTBT:PC71BM(1â:â2,w/w)/
钙/铝结构下,功率转换效率为 6.在
AM1.5G 100 mW cmâ2 的光照条件下,无需任何后处理,就能获得 42% 的高短路电流(Jsc)(13.51 mA cmâ2 )和 61% 的填充因子(FF)。这项研究表明,TBF 是一种很有前途的有机电子器件构件。