申请人:Seimi Chemical Co., Ltd.
公开号:EP1544901A1
公开(公告)日:2005-06-22
A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.
一种用于基板化学机械抛光的抛光剂,它包括(A)磨粒、(B)水介质、(C)酒石酸、(D)三羟甲基氨基甲烷和(E)至少一种从丙二酸和马来酸组成的组中选出的成员,更优选的是,它还含有一种化合物,具有在布线金属表面形成保护膜的功能,以防止布线金属部分的剥离,如苯并三唑。通过使用这种抛光剂,半导体集成电路板表面的铜配线可以以较高的去除率进行抛光,同时在抛光步骤中抑制作为缺陷的疤痕的形成。特别是在抛光铜导线的第一道抛光步骤中,如果铜导线上有一层由钽或钽化合物制成的薄膜作为阻挡膜,则可获得极佳的选择性,不易发生因抛光而造成的分层和侵蚀,并可获得半导体集成电路板的极高精度的平整表面。