Tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]-6,17-diazapentacyclo[12.8.0.03,12.05,10.016,21]docosa-1(14),2,4,6,8,10,12,15,17,19,21-undecaen-2-yl]ethynyl]silane | 1256375-21-9

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 喹啉及其衍生物
• 英文名称: Tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]-6,17-diazapentacyclo[12.8.0.03,12.05,10.016,21]docosa-1(14),2,4,6,8,10,12,15,17,19,21-undecaen-2-yl]ethynyl]silane
• CAS: 1256375-21-9
• 化学式: C₄₂H₅₂N₂Si₂
• 分子量: 641.059
• InChiKey: LLYNYSZIMCSSEX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  12.23
• 重原子数：
  46
• 可旋转键数：
  10
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.43
• 拓扑面积：
  25.8
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  6,13-anthradipyridinequinone 、 三异丙基硅基乙炔 在 正丁基锂 作用下， 以 四氢呋喃 、 正己烷 为溶剂， 反应 4.67h， 以166 mg的产率得到Tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]-6,17-diazapentacyclo[12.8.0.03,12.05,10.016,21]docosa-1(14),2,4,6,8,10,12,15,17,19,21-undecaen-2-yl]ethynyl]silane
  参考文献：
  名称：

  High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences

  摘要：

  We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having mu(h) and mu(e) of 0.11 and 0.15 cm(2)/V.s and 3 having mu(h) and mu(e) of 0.08 and 0.09 cm(2)/V.s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.

  DOI：

  10.1021/ja107046s

文献信息

• High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
  作者：Yi-Yang Liu、Cheng-Li Song、Wei-Jing Zeng、Kai-Ge Zhou、Zi-Fa Shi、Chong-Bo Ma、Feng Yang、Hao-Li Zhang、Xiong Gong

  DOI：10.1021/ja107046s

  日期：2010.11.24

  We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having mu(h) and mu(e) of 0.11 and 0.15 cm(2)/V.s and 3 having mu(h) and mu(e) of 0.08 and 0.09 cm(2)/V.s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.