The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.
本发明提出了一种方法,用于去除在制造半导体、有机发光二极管、发光二极管或液晶显示器电路过程中使用的
铜膜表面形成的氧化物,而不会对下层
金属膜造成腐蚀。包括腐蚀性胺的组合物可以去除金属氧化物,具体取决于添加剂的含量,从 0.01%到 10%不等,与超纯
水的含量无关。当含有
水和 0.01%至 20%的添加剂时,腐蚀性胺以外的极性溶剂可有效去除
金属表面的氧化物。