4,4'-磺酰基二(苯酚)二乙酸酯 | 5456-51-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯酚酯
• 中文名称: 4,4'-磺酰基二(苯酚)二乙酸酯
• 英文名称: 4,4'-diacetoxydiphenylsulfone
• 英文别名: bis-(4-acetoxy-phenyl)-sulfone；Bis-(4-acetoxy-phenyl)-sulfon；4.4'-Diacetoxy-diphenylsulfon；Sulfonylbis(4,1-phenylene) diacetate；[4-(4-acetyloxyphenyl)sulfonylphenyl] acetate
• CAS: 5456-51-9
• 化学式: C₁₆H₁₄O₆S
• 分子量: 334.35
• InChiKey: UVSACKAENHNCEZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.2
• 重原子数：
  23
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  95.1
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  4,4'-磺酰基二(苯酚)二乙酸酯 在 盐酸 、 diammine zinc-chloride 、 氨 作用下， 生成 氨苯砜
  参考文献：
  名称：

  Sah, Journal of the Chinese Chemical Society (Peking), 1947, vol. 15, p. 129,132

  摘要：

  DOI：
• 作为产物：
  描述：

  苯乙醚 在 chromium(VI) oxide 、 二硫化碳 、 三氯化铝 、 氯化亚砜 、 水 、 溶剂黄146 作用下， 生成 4,4'-磺酰基二(苯酚)二乙酸酯
  参考文献：
  名称：

  Sah, Journal of the Chinese Chemical Society (Peking), 1947, vol. 15, p. 129,132

  摘要：

  DOI：

文献信息

• Diarylsulfones, a novel class of human immunodeficiency virus type 1 integrase inhibitors
  作者：N Neamati、A Mazumder、H Zhao、S Sunder、T R Burke、R J Schultz、Y Pommier

  DOI：10.1128/aac.41.2.385

  日期：1997.2

  A majority of reported human immunodeficiency virus type 1 integrase (HIV-1 IN) inhibitors are polyhydroxylated aromatic compounds containing two phenyl rings separated by aliphatic or aromatic linkers. Most inhibitors possessing a catechol moiety exhibit considerable toxicity in cellular assays. In an effort to identify nonhydroxylated analogs, a series of aromatic sulfones were tested for their ability to inhibit the 3' processing and strand transfer steps that are necessary for HIV replication. Several aromatic sulfones have previously been shown to have moderate activity against HIV-1 reverse transcriptase in cellular assays; however, their inhibitory potencies against IN have not been explored. In the present study, the inhibitory effect of a series of sulfones and sulfonamides against IN was determined. Among 52 diaryl sulfones tested, 4 were determined to be highly potent (50% inhibitory concentration [IC50], 0.8 to 10 micrograms/ml), 5 had good potencies (IC50, 11 to 50 micrograms/ml), 10 showed moderate potencies (IC50, 51 to 100 micrograms/ml), and 33 were inactive (IC50, > 100 micrograms/ml) against IN. All of the active compounds exhibited similar potencies against HIV-2 IN. Sulfa drugs, used extensively in treating Pneumocystis carinii pneumonia, a leading cause of morbidity and mortality in AIDs patients, were also examined. Among 19 sulfonamides tested, sulfasalazine (IC50, 50 micrograms/ml) was the most potent. We conclude that potent inhibitors of IN can be designed based on the results presented in this study.

  大多数报告的人类免疫缺陷病毒1型整合酶（HIV-1 IN）抑制剂是含有两个苯环的多羟基芳香化合物，由脂肪或芳香链隔开。大多数含有邻二酚基团的抑制剂在细胞实验中表现出相当的毒性。为了寻找非羟基化的类似物，一系列芳香磺酮被测试其对于HIV复制所必需的3'处理和链转移步骤的抑制能力。先前已经显示出几种芳香磺酮在细胞实验中对HIV-1反转录酶具有中等活性，但它们对IN的抑制效力尚未被探索。在本研究中，测定了一系列磺酮和磺酰胺对IN的抑制效果。在测试的52种二芳基磺酮中，有4种被确定为高效抑制剂（50%抑制浓度[IC50]，0.8至10微克/毫升），5种具有良好的效力（IC50，11至50微克/毫升），10种显示中等的效力（IC50，51至100微克/毫升），而33种对IN无效（IC50，> 100微克/毫升）。所有活性化合物对HIV-2 IN表现出类似的效力。磺胺药物被广泛用于治疗肺孢子菌肺炎，这是AIDs患者发病率和死亡率的主要原因之一。19种磺酰胺被测试，其中磺酸水杨酸（IC50，50微克/毫升）是最有效的。我们得出结论，根据本研究的结果可以设计出有效的IN抑制剂。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
  申请人：Nakajima Makoto

  公开号：US20120315765A1

  公开（公告）日：2012-12-13

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R 1 a R 2 b Si(R 3 ) 4−(a+b) Formula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.

  提供了一种用于制备可用作硬面膜的光刻胶底层膜的抗性底层膜形成组合物。一种用于光刻胶底层膜形成的抗性底层膜形成组合物，包括硅烷化合物作为成分，所述硅烷化合物是可水解的有机硅烷、其水解产物或其水解缩合物，其中所述可水解的有机硅烷是式(1)的可水解的有机硅烷： R1aR2bSi(R3)4−(a+b) 式(1) 其中R1是式(2)： 其中R4是有机基团，R5是C1-10烷基、羟基烷基、硫化键、醚键、酯键或其组合，X1是式(3)、式(4)或式(5)： R2是有机基团，R3是可水解基团。
• SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
  申请人：Takeda Satoshi

  公开号：US20130183830A1

  公开（公告）日：2013-07-18

  Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.

  本文描述了用于形成溶剂可开发光刻胶底层膜的组合物。这些组合物可以包括一个水解性有机硅烷，其硅原子与含有受保护脂肪醇基团的有机基团结合，水解的水解性有机硅烷的水解缩合产物，或两者的组合物和溶剂。该组合物可以形成一个光刻胶底层膜，其中包括水解性有机硅烷，水解的水解性有机硅烷的水解缩合产物，或两者的组合物，硅烷化合物中的硅原子与含有受保护脂肪醇基团的有机基团的比例为总硅原子量的0.1至40%摩尔。还描述了一种将该组合物应用于半导体衬底并烘烤该组合物以形成光刻胶底层膜的方法。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150322212A1

  公开（公告）日：2015-11-12

  A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): R 1 a R 2 b Si(R 3 ) 4-(a+b) wherein R 1 is an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3; Formula (2): R 4 a R 5 b Si(R 6 ) 4-(a+b) wherein, R 4 is an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

  一种可用作硬掩膜的抗蚀底层膜。一种用于光刻的抗蚀底层膜形成组合物，包括：作为硅烷的，一种可水解的硅烷，其水解产物或其水解-缩合产物，其中可水解的硅烷包括公式（1）的可水解硅烷或含有公式（1）的可水解硅烷与公式（2）的可水解硅烷的组合物，其在所有硅烷中的摩尔分数小于50％；公式（1）：R1aR2bSi（R3）4-（a+b），其中R1是含有公式（1-1），公式（1-2）或公式（1-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数；公式（2）：R4aR5bSi（R6）4-（a+b），其中R4是含有公式（2-1），公式（2-2）或公式（2-3）的有机基团：a为1，b为0到2的整数，其中a+b为1到3的整数。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20150249012A1

  公开（公告）日：2015-09-03

  A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.

  一种用于光刻的抗反射层底部膜组合物，包括：硅烷：至少包括一种水解性有机硅烷、其水解产物或水解缩合产物之一，其中所述硅烷包括含有环状有机基团的硅烷，所述环状有机基团的原子包括碳原子、氮原子和除碳和氮原子以外的杂原子。所述水解性有机硅烷可以是式（1）的水解性有机硅烷，其中，R1、R2和R3中至少有一个基团是一个—Si（X）3基团与C1-10烷基团结合，而R1、R2和R3中的其他基团是氢原子、C1-10烷基团或C6-40芳基团；一个含有5-10个成员环的环状有机基团，其中环状有机基团的原子包括碳原子、至少一个氮、硫或氧原子；X是烷氧基、酰氧基或卤素原子。