3-Ethoxymethylcyclopentadien | 7026-91-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 3-Ethoxymethylcyclopentadien
• 英文别名: Aethoxymethyl-cyclopentan；Ethoxymethyl-cyclopentan；Ethoxymethylcyclopentane
• CAS: 7026-91-7
• 化学式: C₈H₁₆O
• 分子量: 128.214
• InChiKey: PFVZTKZTOMUSGC-UHFFFAOYSA-N

物化性质

• 沸点：
  145-146 °C
• 密度：
  0.859±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  9
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  3-Chlor-5-aethoxymethyl-cyclopenten-(1) 在 镍 氢气 、 三乙胺 作用下， 生成 3-Ethoxymethylcyclopentadien
  参考文献：
  名称：

  Reaction of Cyclopentadiene with Hemiacetal Chlorides

  摘要：

  DOI：

  10.1021/jo01050a024

文献信息

• HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160238930A1

  公开（公告）日：2016-08-18

  A polymer for resist use is obtainable from a hemiacetal compound having formula (1 a ) wherein R 1 is H, CH 3 or CF 3 , R 2 to R 4 each are H or a monovalent hydrocarbon group, X 1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k 1 =0 or 1, and k 2 =0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

  从具有以下式（1a）的半缩醛化合物获得用于抗蚀的聚合物，其中R1为H、CH3或CF3，R2至R4分别为H或单价碳氢基团，X1为二价碳氢基团，ZZ表示具有半缩醛结构的非芳香性4至20个碳原子的单环或多环环，k1=0或1，k2=0至3。包含该聚合物的抗蚀组合物显示出在正片和负片显影过程中控制酸扩散和低粗糙度。
• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140045123A1

  公开（公告）日：2014-02-13

  A polymer comprising recurring units derived from a (meth)acrylate monomer of tertiary ester type having branched alkyl on alicycle is used to form a resist composition. When subjected to exposure, PEB and organic solvent development, the resist composition is improved in dissolution contrast.

  一种聚合物，包括由具有支链烷基的萜酸酯单体衍生的重复单元，用于形成抗蚀组合物。在经过曝光、PEB和有机溶剂显影处理后，抗蚀组合物在溶解对比度方面得到改善。
• Silicon compound, silicon-containing compound, composition for forming resits underlayer film containing the same and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2657240A1

  公开（公告）日：2013-10-30

  The invention provides a silicon compound represented by the following general formula (A-1) or (A-2), wherein, R represents a hydrocarbon group having 1 to 6 carbon atoms, R1 and R2 represent an acid labile group, R3 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, k represents an integer of 1 or 2, m represents an integer of 0, 1, or 2, and n represents an integer of 0 or 1. There can be provided a resist underlayer film that can be applied not only to a resist pattern formed by a hydrophilic organic compound obtained in negative development but also to a resist pattern composed of a hydrophobic compound obtained in conventional positive development.

  该发明提供了一个由以下一般式（A-1）或（A-2）表示的硅化合物，其中，R代表具有1至6个碳原子的碳氢基团，R1和R2代表酸敏感基团，R3代表氢原子或具有1至30个碳原子的一价有机基团，k代表1或2的整数，m代表0、1或2的整数，n代表0或1的整数。可以提供一种抗蚀底层膜，不仅可应用于由负显影获得的亲水有机化合物形成的抗蚀图案，还可应用于由传统正显影获得的疏水化合物组成的抗蚀图案。
• POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：HASEGAWA Koji

  公开号：US20130017484A1

  公开（公告）日：2013-01-17

  Polymerizable ester compounds having formula (1) are novel wherein R 1 is H, F, methyl or trifluoromethyl, R 2 is an acid labile group, Aa is a divalent hydrocarbon group which may be separated by —O— or —C(═O)—, and k 1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent developed properties.

  具有式（1）的可聚合酯化合物是新颖的，其中R1为H、F、甲基或三氟甲基，R2为酸敏感基团，Aa为二价的碳氢基团，可以通过—O—或—C（═O）—分离，k1为0或1。它们可用作单体，用于生产对辐射≦500 nm透明的聚合物。以这些聚合物作为基础树脂的辐射敏感抗蚀剂组合物表现出优异的显影性能。
• RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER
  申请人：Momose Hikaru

  公开号：US20090198065A1

  公开（公告）日：2009-08-06

  To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like. In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K 1 and K 2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L 1 and L 2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M 1 , M 2 and M 3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y 1 and Y 2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, and m3 each represent 0 or 1; and R 1 represents H or a methyl group.

  提供一种抗蚀聚合物，其由一个具有结构式（1）或（2）所表示的酸分解单元作为结构单元，能够在DUV准分子激光微影或类似工艺中表现出小的线边粗糙度并产生少量缺陷。在式（1）和（2）中，n表示2至24的整数；J表示单键或二价碳氢基团，当n=2时可以具有取代基/杂原子，或者当n≥3时可以表示n价碳氢基团，可以具有取代基/杂原子；E表示聚合终止剂、链转移剂或聚合引发剂的残基；K1和K2分别表示至少选择自烷基、环烷基、氧烷基、芳烃、二价噻唑环、二价噁唑环和二价咪唑环中的至少一种；L1和L2分别表示至少选择自—C（O）O—、—C（O）—和—OC（O）—中的至少一种；M1、M2和M3分别表示至少选择自烷基、环烷基、氧烷基和芳烃中的至少一种；Y、Y1和Y2分别表示酸分解键；k1、k2、l1、l2、m1、m2和m3分别表示0或1；R1表示H或甲基基团。